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Ba3GaSi2

Alexandria ALEX

Alex-ID: agm005673891 · Space group: P2_1/c (#14)

Basic Information

Formula
Ba3GaSi2
Alex-ID
agm005673891
Elements
3
Sites
24
Space group
P2_1/c (#14)
Crystal system
monoclinic
Volume
856.22
ų
Cell a
8.7742
Å
Cell b
10.0583
Å
Cell c
10.8850
Å
α angle
90.00
°
β angle
116.96
°
γ angle
90.00
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
Ba3GaSi2
Ba
12.00 · 50.0%
Ga
4.00 · 16.7%
Si
8.00 · 33.3%

Energy & Stability

Energy above hull
0.0967
eV/atom
Formation energy
-0.3149
eV/atom
Corrected total energy
-86.1324
eV
Raw total energy
-86.1324
eV

Electronic Structure

Indirect band gap
0.2299
eV
Direct band gap
0.2299
eV
DOS at Fermi level
4.9996
Total magnetisation
0.0000
μB

Additional Information

Prototype ID

AB2C3_2103_spg64

Decomposition

Ba3(GaSi)2 Ba8Ga7 BaSi

Computed at

2023-08-25 01:15:59.060832

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm005673891).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data
# CIF generated by HEAS from Alexandria entry agm005673891
data_agm005673891
_cell_length_a     8.77422
_cell_length_b     10.05825
_cell_length_c     10.88498
_cell_angle_alpha  90.00000
_cell_angle_beta   116.96197
_cell_angle_gamma  90.00000
_cell_volume       856.22140
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Ba1 Ba 0.27469 0.90303 0.04467 1.00000
  Ba2 Ba 0.22531 0.40303 0.45533 1.00000
  Ba3 Ba 0.72531 0.09697 0.95533 1.00000
  Ba4 Ba 0.77469 0.59697 0.54467 1.00000
  Ba5 Ba 0.41222 0.53293 0.14959 1.00000
  Ba6 Ba 0.08778 0.03293 0.35041 1.00000
  Ba7 Ba 0.58778 0.46707 0.85041 1.00000
  Ba8 Ba 0.91222 0.96707 0.64959 1.00000
  Ba9 Ba 0.88718 0.68782 0.17812 1.00000
  Ba10 Ba 0.61282 0.18782 0.32188 1.00000
  Ba11 Ba 0.11282 0.31218 0.82188 1.00000
  Ba12 Ba 0.38718 0.81218 0.67812 1.00000
  Ga1 Ga 0.49557 0.88897 0.41448 1.00000
  Ga2 Ga 0.00443 0.38897 0.08552 1.00000
  Ga3 Ga 0.50443 0.11103 0.58552 1.00000
  Ga4 Ga 0.99557 0.61103 0.91448 1.00000
  Si1 Si 0.69188 0.86549 0.31111 1.00000
  Si2 Si 0.80812 0.36549 0.18889 1.00000
  Si3 Si 0.30812 0.13451 0.68889 1.00000
  Si4 Si 0.19188 0.63451 0.81111 1.00000
  Si5 Si 0.29941 0.70620 0.36389 1.00000
  Si6 Si 0.20059 0.20620 0.13611 1.00000
  Si7 Si 0.70059 0.29380 0.63611 1.00000
  Si8 Si 0.79941 0.79380 0.86389 1.00000
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