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Be2SiTc3

Alexandria ALEX

Alex-ID: agm005674336 · Space group: P2_1/c (#14)

Basic Information

Formula
Be2SiTc3
Alex-ID
agm005674336
Elements
3
Sites
24
Space group
P2_1/c (#14)
Crystal system
monoclinic
Volume
296.51
ų
Cell a
7.8697
Å
Cell b
6.3723
Å
Cell c
9.7828
Å
α angle
90.00
°
β angle
142.81
°
γ angle
90.00
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
Be2SiTc3
Be
8.00 · 33.3%
Si
4.00 · 16.7%
Tc
12.00 · 50.0%

Energy & Stability

Energy above hull
0.2481
eV/atom
Formation energy
-0.1598
eV/atom
Corrected total energy
-179.7278
eV
Raw total energy
-179.7278
eV

Electronic Structure

Indirect band gap
0.0000
eV
Direct band gap
0.0185
eV
DOS at Fermi level
16.4945
Total magnetisation
0.0000
μB

Additional Information

Prototype ID

AB2C3_2161_spg14

Decomposition

Be2SiTc2 SiTc2 BeTc2

Computed at

2023-08-07 06:02:17.096241

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm005674336).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data
# CIF generated by HEAS from Alexandria entry agm005674336
data_agm005674336
_cell_length_a     7.86975
_cell_length_b     6.37232
_cell_length_c     9.78279
_cell_angle_alpha  90.00000
_cell_angle_beta   142.81445
_cell_angle_gamma  90.00000
_cell_volume       296.51336
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Be1 Be 0.88357 0.97900 0.33363 1.00000
  Be2 Be 0.61643 0.47900 0.16637 1.00000
  Be3 Be 0.11643 0.02100 0.66637 1.00000
  Be4 Be 0.38357 0.52100 0.83363 1.00000
  Be5 Be 0.38409 0.63956 0.45585 1.00000
  Be6 Be 0.11591 0.13956 0.04415 1.00000
  Be7 Be 0.61591 0.36044 0.54415 1.00000
  Be8 Be 0.88409 0.86044 0.95585 1.00000
  Si1 Si 0.44559 0.86058 0.29000 1.00000
  Si2 Si 0.05441 0.36058 0.21000 1.00000
  Si3 Si 0.55441 0.13942 0.71000 1.00000
  Si4 Si 0.94559 0.63942 0.79000 1.00000
  Tc1 Tc 0.39567 0.82298 0.00771 1.00000
  Tc2 Tc 0.10433 0.32298 0.49229 1.00000
  Tc3 Tc 0.60433 0.17702 0.99229 1.00000
  Tc4 Tc 0.89567 0.67702 0.50771 1.00000
  Tc5 Tc 0.30830 0.49660 0.17665 1.00000
  Tc6 Tc 0.19170 0.99660 0.32335 1.00000
  Tc7 Tc 0.69170 0.50340 0.82335 1.00000
  Tc8 Tc 0.80830 0.00340 0.67665 1.00000
  Tc9 Tc 0.86942 0.70019 0.17584 1.00000
  Tc10 Tc 0.63058 0.20019 0.32416 1.00000
  Tc11 Tc 0.13058 0.29981 0.82416 1.00000
  Tc12 Tc 0.36942 0.79981 0.67584 1.00000
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