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Ce3Si2Os

Alexandria ALEX

Alex-ID: agm005674446 · 空间群: Pnma (#62)

基础信息

化学式
Ce3Si2Os
Alex-ID
agm005674446
元素数
3
位点数
24
空间群
Pnma (#62)
晶系
orthorhombic
体积
534.08
ų
晶胞参数 a
4.2938
Å
晶胞参数 b
10.3824
Å
晶胞参数 c
11.9803
Å
α 角
90.00
°
β 角
90.00
°
γ 角
90.00
°

组成

元素组成(原子分数)
组成信息
化学式
Ce3Si2Os
Ce
12.00 · 50.0%
Si
8.00 · 33.3%
Os
4.00 · 16.7%

能量与稳定性

凸包上方能量
0.0094
eV/atom
形成能
-0.5817
eV/atom
校正后总能量
-173.4697
eV
原始总能量
-173.4697
eV

电子结构

间接带隙
0.0000
eV
直接带隙
0.0018
eV
费米能级态密度
40.2971
总磁矩
2.6518
μB

其他信息

原型 ID

AB2C3_2056_spg62

分解产物

Ce5Si2Os Ce5Si3 CeSiOs

计算时间

2023-08-25 01:36:51.260510

引用参考

Alexandria 官方页面
https://alexandria.icams.rub.de/
参考引用

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm005674446).

文献引用

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

晶体结构 3D 渲染

加载 3D 结构...

样式: Ball & Stick
原始 CIF 数据
# CIF generated by HEAS from Alexandria entry agm005674446
data_agm005674446
_cell_length_a     4.29380
_cell_length_b     10.38241
_cell_length_c     11.98034
_cell_angle_alpha  90.00000
_cell_angle_beta   90.00000
_cell_angle_gamma  90.00000
_cell_volume       534.08295
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Ce1 Ce 0.25000 0.40917 0.04492 1.00000
  Ce2 Ce 0.75000 0.59083 0.95508 1.00000
  Ce3 Ce 0.75000 0.90917 0.45508 1.00000
  Ce4 Ce 0.25000 0.09083 0.54492 1.00000
  Ce5 Ce 0.25000 0.72529 0.23311 1.00000
  Ce6 Ce 0.75000 0.27471 0.76689 1.00000
  Ce7 Ce 0.75000 0.22529 0.26689 1.00000
  Ce8 Ce 0.25000 0.77471 0.73311 1.00000
  Ce9 Ce 0.25000 0.43713 0.37704 1.00000
  Ce10 Ce 0.75000 0.56287 0.62296 1.00000
  Ce11 Ce 0.75000 0.93713 0.12296 1.00000
  Ce12 Ce 0.25000 0.06287 0.87704 1.00000
  Si1 Si 0.25000 0.70336 0.48567 1.00000
  Si2 Si 0.75000 0.29664 0.51433 1.00000
  Si3 Si 0.75000 0.20336 0.01433 1.00000
  Si4 Si 0.25000 0.79664 0.98567 1.00000
  Si5 Si 0.25000 0.01797 0.29292 1.00000
  Si6 Si 0.75000 0.98203 0.70708 1.00000
  Si7 Si 0.75000 0.51797 0.20708 1.00000
  Si8 Si 0.25000 0.48203 0.79292 1.00000
  Os1 Os 0.25000 0.14958 0.11406 1.00000
  Os2 Os 0.75000 0.85042 0.88594 1.00000
  Os3 Os 0.75000 0.64958 0.38594 1.00000
  Os4 Os 0.25000 0.35042 0.61406 1.00000
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