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Ba3CdGa2

Alexandria ALEX

Alex-ID: agm005674704 · Space group: P2_1/c (#14)

Basic Information

Formula
Ba3CdGa2
Alex-ID
agm005674704
Elements
3
Sites
24
Space group
P2_1/c (#14)
Crystal system
monoclinic
Volume
870.03
ų
Cell a
8.4761
Å
Cell b
11.0247
Å
Cell c
12.7192
Å
α angle
90.00
°
β angle
132.95
°
γ angle
90.00
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
Ba3CdGa2
Ba
12.00 · 50.0%
Cd
4.00 · 16.7%
Ga
8.00 · 33.3%

Energy & Stability

Energy above hull
0.0803
eV/atom
Formation energy
-0.2845
eV/atom
Corrected total energy
-57.8301
eV
Raw total energy
-57.8301
eV

Electronic Structure

Indirect band gap
0.0000
eV
Direct band gap
0.0395
eV
DOS at Fermi level
17.0122
Total magnetisation
0.0000
μB

Additional Information

Prototype ID

AB2C3_2065_spg14

Decomposition

Ba8Ga7 BaCd BaGa2

Computed at

2023-08-18 04:17:45.598973

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm005674704).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data
# CIF generated by HEAS from Alexandria entry agm005674704
data_agm005674704
_cell_length_a     8.47607
_cell_length_b     11.02473
_cell_length_c     12.71920
_cell_angle_alpha  90.00000
_cell_angle_beta   132.94571
_cell_angle_gamma  90.00000
_cell_volume       870.02805
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Ba1 Ba 0.41646 0.86439 0.05787 1.00000
  Ba2 Ba 0.08354 0.36439 0.44213 1.00000
  Ba3 Ba 0.58354 0.13561 0.94213 1.00000
  Ba4 Ba 0.91646 0.63561 0.55787 1.00000
  Ba5 Ba 0.37331 0.53355 0.18246 1.00000
  Ba6 Ba 0.12669 0.03355 0.31754 1.00000
  Ba7 Ba 0.62669 0.46645 0.81754 1.00000
  Ba8 Ba 0.87331 0.96645 0.68246 1.00000
  Ba9 Ba 0.96421 0.67621 0.22066 1.00000
  Ba10 Ba 0.53579 0.17621 0.27934 1.00000
  Ba11 Ba 0.03579 0.32379 0.77934 1.00000
  Ba12 Ba 0.46421 0.82379 0.72066 1.00000
  Cd1 Cd 0.45714 0.82390 0.34551 1.00000
  Cd2 Cd 0.04286 0.32390 0.15449 1.00000
  Cd3 Cd 0.54286 0.17610 0.65449 1.00000
  Cd4 Cd 0.95714 0.67610 0.84551 1.00000
  Ga1 Ga 0.86650 0.91184 0.40323 1.00000
  Ga2 Ga 0.63350 0.41184 0.09677 1.00000
  Ga3 Ga 0.13350 0.08816 0.59677 1.00000
  Ga4 Ga 0.36650 0.58816 0.90323 1.00000
  Ga5 Ga 0.49019 0.61757 0.53319 1.00000
  Ga6 Ga 0.00981 0.11757 0.96681 1.00000
  Ga7 Ga 0.50981 0.38243 0.46681 1.00000
  Ga8 Ga 0.99019 0.88243 0.03319 1.00000
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