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Ba3GaSn2

Alexandria ALEX

Alex-ID: agm005675095 · Space group: Pnma (#62)

Basic Information

Formula
Ba3GaSn2
Alex-ID
agm005675095
Elements
3
Sites
24
Space group
Pnma (#62)
Crystal system
orthorhombic
Volume
949.98
ų
Cell a
4.7944
Å
Cell b
14.2595
Å
Cell c
13.8957
Å
α angle
90.00
°
β angle
90.00
°
γ angle
90.00
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
Ba3GaSn2
Ba
12.00 · 50.0%
Ga
4.00 · 16.7%
Sn
8.00 · 33.3%

Energy & Stability

Energy above hull
0.0537
eV/atom
Formation energy
-0.5720
eV/atom
Corrected total energy
-80.9400
eV
Raw total energy
-80.9400
eV

Electronic Structure

Indirect band gap
0.0000
eV
Direct band gap
0.0108
eV
DOS at Fermi level
18.5383
Total magnetisation
0.0011
μB

Additional Information

Prototype ID

AB2C3_315_spg62

Decomposition

Ba3(GaSn)2 Ba2Sn BaSn

Computed at

2023-08-18 03:05:11.422360

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm005675095).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data
# CIF generated by HEAS from Alexandria entry agm005675095
data_agm005675095
_cell_length_a     4.79437
_cell_length_b     14.25951
_cell_length_c     13.89568
_cell_angle_alpha  90.00000
_cell_angle_beta   90.00000
_cell_angle_gamma  90.00000
_cell_volume       949.98382
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Ba1 Ba 0.25000 0.38091 0.06868 1.00000
  Ba2 Ba 0.75000 0.61909 0.93132 1.00000
  Ba3 Ba 0.75000 0.88091 0.43132 1.00000
  Ba4 Ba 0.25000 0.11909 0.56868 1.00000
  Ba5 Ba 0.25000 0.70366 0.19741 1.00000
  Ba6 Ba 0.75000 0.29634 0.80259 1.00000
  Ba7 Ba 0.75000 0.20366 0.30259 1.00000
  Ba8 Ba 0.25000 0.79634 0.69741 1.00000
  Ba9 Ba 0.25000 0.44704 0.38131 1.00000
  Ba10 Ba 0.75000 0.55296 0.61869 1.00000
  Ba11 Ba 0.75000 0.94704 0.11869 1.00000
  Ba12 Ba 0.25000 0.05296 0.88131 1.00000
  Ga1 Ga 0.25000 0.14864 0.14403 1.00000
  Ga2 Ga 0.75000 0.85136 0.85597 1.00000
  Ga3 Ga 0.75000 0.64864 0.35597 1.00000
  Ga4 Ga 0.25000 0.35136 0.64403 1.00000
  Sn1 Sn 0.25000 0.68297 0.46372 1.00000
  Sn2 Sn 0.75000 0.31703 0.53628 1.00000
  Sn3 Sn 0.75000 0.18297 0.03628 1.00000
  Sn4 Sn 0.25000 0.81703 0.96372 1.00000
  Sn5 Sn 0.25000 0.01843 0.30063 1.00000
  Sn6 Sn 0.75000 0.98157 0.69937 1.00000
  Sn7 Sn 0.75000 0.51843 0.19937 1.00000
  Sn8 Sn 0.25000 0.48157 0.80063 1.00000
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