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Ba3AlGa2

Alexandria ALEX

Alex-ID: agm005676428 · Space group: P2_1/c (#14)

Basic Information

Formula
Ba3AlGa2
Alex-ID
agm005676428
Elements
3
Sites
24
Space group
P2_1/c (#14)
Crystal system
monoclinic
Volume
913.33
ų
Cell a
7.9961
Å
Cell b
10.7383
Å
Cell c
12.3448
Å
α angle
90.00
°
β angle
120.50
°
γ angle
90.00
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
Ba3AlGa2
Ba
12.00 · 50.0%
Al
4.00 · 16.7%
Ga
8.00 · 33.3%

Energy & Stability

Energy above hull
0.0778
eV/atom
Formation energy
-0.2539
eV/atom
Corrected total energy
-68.3821
eV
Raw total energy
-68.3821
eV

Electronic Structure

Indirect band gap
0.0000
eV
Direct band gap
0.0336
eV
DOS at Fermi level
15.0355
Total magnetisation
0.0000
μB

Additional Information

Prototype ID

AB2C3_2087_spg14

Decomposition

Ba2AlGa Ba3Al3Ga2 Ba8Ga7

Computed at

2023-08-07 06:06:42.099447

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm005676428).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data
# CIF generated by HEAS from Alexandria entry agm005676428
data_agm005676428
_cell_length_a     7.99605
_cell_length_b     10.73825
_cell_length_c     12.34475
_cell_angle_alpha  90.00000
_cell_angle_beta   120.49669
_cell_angle_gamma  90.00000
_cell_volume       913.32795
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Ba1 Ba 0.30503 0.90693 0.09093 1.00000
  Ba2 Ba 0.19497 0.40693 0.40907 1.00000
  Ba3 Ba 0.69497 0.09307 0.90907 1.00000
  Ba4 Ba 0.80503 0.59307 0.59093 1.00000
  Ba5 Ba 0.45990 0.52458 0.17739 1.00000
  Ba6 Ba 0.04010 0.02458 0.32261 1.00000
  Ba7 Ba 0.54010 0.47542 0.82261 1.00000
  Ba8 Ba 0.95990 0.97542 0.67739 1.00000
  Ba9 Ba 0.85697 0.69266 0.13711 1.00000
  Ba10 Ba 0.64303 0.19266 0.36289 1.00000
  Ba11 Ba 0.14303 0.30734 0.86289 1.00000
  Ba12 Ba 0.35697 0.80734 0.63711 1.00000
  Al1 Al 0.50993 0.90750 0.43198 1.00000
  Al2 Al 0.99007 0.40750 0.06802 1.00000
  Al3 Al 0.49007 0.09250 0.56802 1.00000
  Al4 Al 0.00993 0.59250 0.93198 1.00000
  Ga1 Ga 0.73351 0.81442 0.35916 1.00000
  Ga2 Ga 0.76649 0.31442 0.14084 1.00000
  Ga3 Ga 0.26649 0.18558 0.64084 1.00000
  Ga4 Ga 0.23351 0.68558 0.85916 1.00000
  Ga5 Ga 0.34969 0.69978 0.35953 1.00000
  Ga6 Ga 0.15031 0.19978 0.14047 1.00000
  Ga7 Ga 0.65031 0.30022 0.64047 1.00000
  Ga8 Ga 0.84969 0.80022 0.85953 1.00000
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