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Ti2V3Si4

Alexandria ALEX

Alex-ID: agm005677664 · Space group: P2_1/c (#14)

Basic Information

Formula
Ti2V3Si4
Alex-ID
agm005677664
Elements
3
Sites
18
Space group
P2_1/c (#14)
Crystal system
monoclinic
Volume
250.12
ų
Cell a
6.3422
Å
Cell b
6.4775
Å
Cell c
6.4680
Å
α angle
90.00
°
β angle
90.00
°
γ angle
109.73
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
Ti2V3Si4
Ti
4.00 · 22.2%
V
6.00 · 33.3%
Si
8.00 · 44.4%

Energy & Stability

Energy above hull
0.0000
eV/atom
Formation energy
-0.7176
eV/atom
Corrected total energy
-142.5922
eV
Raw total energy
-142.5922
eV

Electronic Structure

Indirect band gap
0.0000
eV
Direct band gap
0.0000
eV
DOS at Fermi level
8.1727
Total magnetisation
0.0000
μB

Additional Information

Prototype ID

A2B3C4_763_spg14

Decomposition

Ti2V3Si4

Computed at

2023-06-28 08:53:54.205593

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm005677664).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data
# CIF generated by HEAS from Alexandria entry agm005677664
data_agm005677664
_cell_length_a     6.34218
_cell_length_b     6.47749
_cell_length_c     6.46796
_cell_angle_alpha  90.00000
_cell_angle_beta   90.00000
_cell_angle_gamma  109.72553
_cell_volume       250.12100
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Ti1 Ti 0.55769 0.18712 0.33078 1.00000
  Ti2 Ti 0.94231 0.81288 0.83078 1.00000
  Ti3 Ti 0.44231 0.81288 0.66922 1.00000
  Ti4 Ti 0.05769 0.18712 0.16922 1.00000
  V1 V 0.00000 0.50000 0.50000 1.00000
  V2 V 0.50000 0.50000 0.00000 1.00000
  V3 V 0.74553 0.25233 0.82402 1.00000
  V4 V 0.75447 0.74767 0.32402 1.00000
  V5 V 0.25447 0.74767 0.17598 1.00000
  V6 V 0.24553 0.25233 0.67598 1.00000
  Si1 Si 0.85287 0.07705 0.53536 1.00000
  Si2 Si 0.64713 0.92295 0.03536 1.00000
  Si3 Si 0.14713 0.92295 0.46464 1.00000
  Si4 Si 0.35287 0.07705 0.96464 1.00000
  Si5 Si 0.86633 0.48851 0.12990 1.00000
  Si6 Si 0.63367 0.51149 0.62990 1.00000
  Si7 Si 0.13367 0.51149 0.87010 1.00000
  Si8 Si 0.36633 0.48851 0.37010 1.00000
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