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SiGeP

Alexandria ALEX

Alex-ID: agm005678646 · 空间群: Pm (#6)

基础信息

化学式
SiGeP
Alex-ID
agm005678646
元素数
3
位点数
6
空间群
Pm (#6)
晶系
monoclinic
体积
129.02
ų
晶胞参数 a
3.5754
Å
晶胞参数 b
5.5188
Å
晶胞参数 c
6.5501
Å
α 角
93.37
°
β 角
90.02
°
γ 角
90.02
°

组成

元素组成(原子分数)
组成信息
化学式
SiGeP
Si
2.00 · 33.3%
Ge
2.00 · 33.3%
P
2.00 · 33.3%

能量与稳定性

凸包上方能量
0.2150
eV/atom
形成能
0.1125
eV/atom
校正后总能量
-30.2254
eV
原始总能量
-30.2254
eV

电子结构

间接带隙
0.0000
eV
直接带隙
0.0011
eV
费米能级态密度
1.0395
总磁矩
0.0000
μB

其他信息

原型 ID

ABC_487_spg31

分解产物

Ge SiP

计算时间

2023-06-19 12:30:08.313623

引用参考

Alexandria 官方页面
https://alexandria.icams.rub.de/
参考引用

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm005678646).

文献引用

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

晶体结构 3D 渲染

加载 3D 结构...

样式: Ball & Stick
原始 CIF 数据
# CIF generated by HEAS from Alexandria entry agm005678646
data_agm005678646
_cell_length_a     3.57545
_cell_length_b     5.51880
_cell_length_c     6.55009
_cell_angle_alpha  93.36504
_cell_angle_beta   90.02189
_cell_angle_gamma  90.01751
_cell_volume       129.02471
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Si1 Si 0.65598 0.39230 0.75057 1.00000
  Si2 Si 0.15712 0.85521 0.52562 1.00000
  Ge1 Ge 0.15770 0.02417 0.18558 1.00000
  Ge2 Ge 0.65730 0.72429 0.03626 1.00000
  P1 P 0.15583 0.44292 0.53630 1.00000
  P2 P 0.65729 0.96793 0.73395 1.00000
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