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Sc2Ta3Si4

Alexandria ALEX

Alex-ID: agm005678920 · Space group: P2_1/c (#14)

Basic Information

Formula
Sc2Ta3Si4
Alex-ID
agm005678920
Elements
3
Sites
18
Space group
P2_1/c (#14)
Crystal system
monoclinic
Volume
301.27
ų
Cell a
6.7078
Å
Cell b
6.8832
Å
Cell c
6.8946
Å
α angle
90.00
°
β angle
90.00
°
γ angle
108.84
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
Sc2Ta3Si4
Sc
4.00 · 22.2%
Ta
6.00 · 33.3%
Si
8.00 · 44.4%

Energy & Stability

Energy above hull
0.0000
eV/atom
Formation energy
-0.7794
eV/atom
Corrected total energy
-153.8555
eV
Raw total energy
-153.8555
eV

Electronic Structure

Indirect band gap
0.0000
eV
Direct band gap
0.0000
eV
DOS at Fermi level
7.2840
Total magnetisation
0.0000
μB

Additional Information

Prototype ID

A2B3C4_99_spg14

Decomposition

Sc2Ta3Si4

Computed at

2023-06-28 08:37:48.233374

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm005678920).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data
# CIF generated by HEAS from Alexandria entry agm005678920
data_agm005678920
_cell_length_a     6.70775
_cell_length_b     6.88321
_cell_length_c     6.89462
_cell_angle_alpha  90.00000
_cell_angle_beta   90.00000
_cell_angle_gamma  108.84241
_cell_volume       301.27141
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Sc1 Sc 0.56257 0.18645 0.32960 1.00000
  Sc2 Sc 0.93743 0.81355 0.82960 1.00000
  Sc3 Sc 0.43743 0.81355 0.67040 1.00000
  Sc4 Sc 0.06257 0.18645 0.17040 1.00000
  Ta1 Ta 0.00000 0.50000 0.50000 1.00000
  Ta2 Ta 0.50000 0.50000 0.00000 1.00000
  Ta3 Ta 0.74619 0.25297 0.82028 1.00000
  Ta4 Ta 0.75381 0.74703 0.32028 1.00000
  Ta5 Ta 0.25381 0.74703 0.17972 1.00000
  Ta6 Ta 0.24619 0.25297 0.67972 1.00000
  Si1 Si 0.86005 0.07961 0.52961 1.00000
  Si2 Si 0.63995 0.92039 0.02961 1.00000
  Si3 Si 0.13995 0.92039 0.47039 1.00000
  Si4 Si 0.36005 0.07961 0.97039 1.00000
  Si5 Si 0.86988 0.48436 0.12694 1.00000
  Si6 Si 0.63012 0.51564 0.62694 1.00000
  Si7 Si 0.13012 0.51564 0.87306 1.00000
  Si8 Si 0.36988 0.48436 0.37306 1.00000
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