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Sc2Si4Tc3

Alexandria ALEX

Alex-ID: agm005678951 · Space group: P2_1/c (#14)

Basic Information

Formula
Sc2Si4Tc3
Alex-ID
agm005678951
Elements
3
Sites
18
Space group
P2_1/c (#14)
Crystal system
monoclinic
Volume
271.88
ų
Cell a
6.5342
Å
Cell b
6.6640
Å
Cell c
6.6302
Å
α angle
90.00
°
β angle
90.00
°
γ angle
109.66
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
Sc2Si4Tc3
Sc
4.00 · 22.2%
Si
8.00 · 44.4%
Tc
6.00 · 33.3%

Energy & Stability

Energy above hull
0.0000
eV/atom
Formation energy
-0.7938
eV/atom
Corrected total energy
-145.1951
eV
Raw total energy
-145.1951
eV

Electronic Structure

Indirect band gap
0.0000
eV
Direct band gap
0.0000
eV
DOS at Fermi level
7.6024
Total magnetisation
0.0000
μB

Additional Information

Prototype ID

A2B3C4_99_spg14

Decomposition

Sc2Si4Tc3

Computed at

2023-06-28 08:39:05.092531

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm005678951).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data
# CIF generated by HEAS from Alexandria entry agm005678951
data_agm005678951
_cell_length_a     6.53417
_cell_length_b     6.66401
_cell_length_c     6.63019
_cell_angle_alpha  90.00000
_cell_angle_beta   90.00000
_cell_angle_gamma  109.65691
_cell_volume       271.87854
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Sc1 Sc 0.55856 0.19238 0.33170 1.00000
  Sc2 Sc 0.94144 0.80762 0.83170 1.00000
  Sc3 Sc 0.44144 0.80762 0.66830 1.00000
  Sc4 Sc 0.05856 0.19238 0.16830 1.00000
  Si1 Si 0.87105 0.09774 0.54531 1.00000
  Si2 Si 0.62895 0.90226 0.04531 1.00000
  Si3 Si 0.12895 0.90226 0.45469 1.00000
  Si4 Si 0.37105 0.09774 0.95469 1.00000
  Si5 Si 0.86560 0.50629 0.13864 1.00000
  Si6 Si 0.63440 0.49371 0.63864 1.00000
  Si7 Si 0.13440 0.49371 0.86136 1.00000
  Si8 Si 0.36560 0.50629 0.36136 1.00000
  Tc1 Tc 0.00000 0.50000 0.50000 1.00000
  Tc2 Tc 0.50000 0.50000 0.00000 1.00000
  Tc3 Tc 0.75704 0.23392 0.84880 1.00000
  Tc4 Tc 0.74296 0.76608 0.34880 1.00000
  Tc5 Tc 0.24296 0.76608 0.15120 1.00000
  Tc6 Tc 0.25704 0.23392 0.65120 1.00000
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