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Th2Si4Mo3

Alexandria ALEX

Alex-ID: agm005679401 · Space group: P2_1/c (#14)

Basic Information

Formula
Th2Si4Mo3
Alex-ID
agm005679401
Elements
3
Sites
18
Space group
P2_1/c (#14)
Crystal system
monoclinic
Volume
326.05
ų
Cell a
6.9812
Å
Cell b
7.0242
Å
Cell c
7.0702
Å
α angle
90.00
°
β angle
90.00
°
γ angle
109.87
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
Th2Si4Mo3
Th
4.00 · 22.2%
Si
8.00 · 44.4%
Mo
6.00 · 33.3%

Energy & Stability

Energy above hull
0.0046
eV/atom
Formation energy
-0.5446
eV/atom
Corrected total energy
-147.8624
eV
Raw total energy
-147.8624
eV

Electronic Structure

Indirect band gap
0.0000
eV
Direct band gap
0.0617
eV
DOS at Fermi level
10.9516
Total magnetisation
0.0000
μB

Additional Information

Prototype ID

A2B3C4_763_spg14

Decomposition

ThSi2Mo SiMo3 Th3Si2

Computed at

2023-06-28 08:00:25.600315

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm005679401).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data
# CIF generated by HEAS from Alexandria entry agm005679401
data_agm005679401
_cell_length_a     6.98116
_cell_length_b     7.02420
_cell_length_c     7.07020
_cell_angle_alpha  90.00000
_cell_angle_beta   90.00000
_cell_angle_gamma  109.87499
_cell_volume       326.05140
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Th1 Th 0.55846 0.19090 0.33184 1.00000
  Th2 Th 0.94154 0.80910 0.83184 1.00000
  Th3 Th 0.44154 0.80910 0.66816 1.00000
  Th4 Th 0.05846 0.19090 0.16816 1.00000
  Si1 Si 0.87630 0.09940 0.55193 1.00000
  Si2 Si 0.62370 0.90060 0.05193 1.00000
  Si3 Si 0.12370 0.90060 0.44807 1.00000
  Si4 Si 0.37630 0.09940 0.94807 1.00000
  Si5 Si 0.87032 0.51367 0.13761 1.00000
  Si6 Si 0.62968 0.48633 0.63761 1.00000
  Si7 Si 0.12968 0.48633 0.86239 1.00000
  Si8 Si 0.37032 0.51367 0.36239 1.00000
  Mo1 Mo 0.00000 0.50000 0.50000 1.00000
  Mo2 Mo 0.50000 0.50000 0.00000 1.00000
  Mo3 Mo 0.75514 0.24738 0.84331 1.00000
  Mo4 Mo 0.74486 0.75262 0.34331 1.00000
  Mo5 Mo 0.24486 0.75262 0.15669 1.00000
  Mo6 Mo 0.25514 0.24738 0.65669 1.00000
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