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Dy2V3Si4

Alexandria ALEX

Alex-ID: agm005679691 · Space group: P2_1/c (#14)

Basic Information

Formula
Dy2V3Si4
Alex-ID
agm005679691
Elements
3
Sites
18
Space group
P2_1/c (#14)
Crystal system
monoclinic
Volume
294.72
ų
Cell a
6.7044
Å
Cell b
6.8252
Å
Cell c
6.8203
Å
α angle
90.00
°
β angle
90.00
°
γ angle
109.21
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
Dy2V3Si4
Dy
4.00 · 22.2%
V
6.00 · 33.3%
Si
8.00 · 44.4%

Energy & Stability

Energy above hull
0.0286
eV/atom
Formation energy
-0.6612
eV/atom
Corrected total energy
-128.4124
eV
Raw total energy
-128.4124
eV

Electronic Structure

Indirect band gap
0.0000
eV
Direct band gap
0.0000
eV
DOS at Fermi level
11.6633
Total magnetisation
0.0000
μB

Additional Information

Prototype ID

A2B3C4_99_spg14

Decomposition

VSi2 V5Si3 DySi

Computed at

2023-06-28 09:04:33.238960

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm005679691).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data
# CIF generated by HEAS from Alexandria entry agm005679691
data_agm005679691
_cell_length_a     6.70438
_cell_length_b     6.82520
_cell_length_c     6.82027
_cell_angle_alpha  90.00000
_cell_angle_beta   90.00000
_cell_angle_gamma  109.20535
_cell_volume       294.71778
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Dy1 Dy 0.56088 0.18663 0.33225 1.00000
  Dy2 Dy 0.93912 0.81337 0.83225 1.00000
  Dy3 Dy 0.43912 0.81337 0.66775 1.00000
  Dy4 Dy 0.06088 0.18663 0.16775 1.00000
  V1 V 0.00000 0.50000 0.50000 1.00000
  V2 V 0.50000 0.50000 0.00000 1.00000
  V3 V 0.74861 0.25955 0.82862 1.00000
  V4 V 0.75139 0.74045 0.32862 1.00000
  V5 V 0.25139 0.74045 0.17138 1.00000
  V6 V 0.24861 0.25955 0.67138 1.00000
  Si1 Si 0.87288 0.09152 0.54521 1.00000
  Si2 Si 0.62712 0.90848 0.04521 1.00000
  Si3 Si 0.12712 0.90848 0.45479 1.00000
  Si4 Si 0.37288 0.09152 0.95479 1.00000
  Si5 Si 0.87011 0.50021 0.12898 1.00000
  Si6 Si 0.62989 0.49979 0.62898 1.00000
  Si7 Si 0.12989 0.49979 0.87102 1.00000
  Si8 Si 0.37011 0.50021 0.37102 1.00000
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