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Ho2V3Si4

Alexandria ALEX

Alex-ID: agm005679696 · Space group: P2_1/c (#14)

Basic Information

Formula
Ho2V3Si4
Alex-ID
agm005679696
Elements
3
Sites
18
Space group
P2_1/c (#14)
Crystal system
monoclinic
Volume
292.53
ų
Cell a
6.6867
Å
Cell b
6.8088
Å
Cell c
6.8047
Å
α angle
90.00
°
β angle
90.00
°
γ angle
109.22
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
Ho2V3Si4
Ho
4.00 · 22.2%
V
6.00 · 33.3%
Si
8.00 · 44.4%

Energy & Stability

Energy above hull
0.0183
eV/atom
Formation energy
-0.6713
eV/atom
Corrected total energy
-128.4929
eV
Raw total energy
-128.4929
eV

Electronic Structure

Indirect band gap
0.0000
eV
Direct band gap
0.0000
eV
DOS at Fermi level
11.5592
Total magnetisation
0.0000
μB

Additional Information

Prototype ID

A2B3C4_99_spg14

Decomposition

VSi2 V5Si3 HoSi

Computed at

2023-06-28 09:09:38.541101

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm005679696).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data
# CIF generated by HEAS from Alexandria entry agm005679696
data_agm005679696
_cell_length_a     6.68668
_cell_length_b     6.80879
_cell_length_c     6.80466
_cell_angle_alpha  90.00000
_cell_angle_beta   90.00000
_cell_angle_gamma  109.22210
_cell_volume       292.53199
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Ho1 Ho 0.56087 0.18686 0.33195 1.00000
  Ho2 Ho 0.93913 0.81314 0.83195 1.00000
  Ho3 Ho 0.43913 0.81314 0.66805 1.00000
  Ho4 Ho 0.06087 0.18686 0.16805 1.00000
  V1 V 0.00000 0.50000 0.50000 1.00000
  V2 V 0.50000 0.50000 0.00000 1.00000
  V3 V 0.74841 0.25897 0.82835 1.00000
  V4 V 0.75159 0.74103 0.32835 1.00000
  V5 V 0.25159 0.74103 0.17165 1.00000
  V6 V 0.24841 0.25897 0.67165 1.00000
  Si1 Si 0.87188 0.09067 0.54459 1.00000
  Si2 Si 0.62812 0.90933 0.04459 1.00000
  Si3 Si 0.12812 0.90933 0.45541 1.00000
  Si4 Si 0.37188 0.09067 0.95541 1.00000
  Si5 Si 0.87002 0.49989 0.12891 1.00000
  Si6 Si 0.62998 0.50011 0.62891 1.00000
  Si7 Si 0.12998 0.50011 0.87109 1.00000
  Si8 Si 0.37002 0.49989 0.37109 1.00000
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