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Tm2Hf3Si4

Alexandria ALEX

Alex-ID: agm005679764 · Space group: P2_1/c (#14)

Basic Information

Formula
Tm2Hf3Si4
Alex-ID
agm005679764
Elements
3
Sites
18
Space group
P2_1/c (#14)
Crystal system
monoclinic
Volume
348.05
ų
Cell a
7.0211
Å
Cell b
7.2318
Å
Cell c
7.2293
Å
α angle
90.00
°
β angle
90.00
°
γ angle
108.53
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
Tm2Hf3Si4
Tm
4.00 · 22.2%
Hf
6.00 · 33.3%
Si
8.00 · 44.4%

Energy & Stability

Energy above hull
0.0000
eV/atom
Formation energy
-0.8279
eV/atom
Corrected total energy
-135.8922
eV
Raw total energy
-135.8922
eV

Electronic Structure

Indirect band gap
0.0000
eV
Direct band gap
0.0139
eV
DOS at Fermi level
13.0156
Total magnetisation
0.0000
μB

Additional Information

Prototype ID

A2B3C4_1306_spg14

Decomposition

Tm2Hf3Si4

Computed at

2023-06-28 08:58:47.276736

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm005679764).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data
# CIF generated by HEAS from Alexandria entry agm005679764
data_agm005679764
_cell_length_a     7.02109
_cell_length_b     7.23182
_cell_length_c     7.22927
_cell_angle_alpha  90.00000
_cell_angle_beta   90.00000
_cell_angle_gamma  108.52650
_cell_volume       348.04533
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Tm1 Tm 0.57082 0.19050 0.32883 1.00000
  Tm2 Tm 0.92918 0.80950 0.82883 1.00000
  Tm3 Tm 0.42918 0.80950 0.67117 1.00000
  Tm4 Tm 0.07082 0.19050 0.17117 1.00000
  Hf1 Hf 0.00000 0.50000 0.50000 1.00000
  Hf2 Hf 0.50000 0.50000 0.00000 1.00000
  Hf3 Hf 0.74857 0.25156 0.81933 1.00000
  Hf4 Hf 0.75143 0.74844 0.31933 1.00000
  Hf5 Hf 0.25143 0.74844 0.18067 1.00000
  Hf6 Hf 0.24857 0.25156 0.68067 1.00000
  Si1 Si 0.86724 0.08156 0.53126 1.00000
  Si2 Si 0.63276 0.91844 0.03126 1.00000
  Si3 Si 0.13276 0.91844 0.46874 1.00000
  Si4 Si 0.36724 0.08156 0.96874 1.00000
  Si5 Si 0.86999 0.48931 0.12452 1.00000
  Si6 Si 0.63001 0.51069 0.62452 1.00000
  Si7 Si 0.13001 0.51069 0.87548 1.00000
  Si8 Si 0.36999 0.48931 0.37548 1.00000
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