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In3Ga3Sn5

Alexandria ALEX

Alex-ID: agm005680010 · 空间群: P-62m (#189)

Alexandria Database API

基础信息

化学式
In3Ga3Sn5
Alex-ID
agm005680010
元素数
3
位点数
11
空间群
P-62m (#189)
晶系
hexagonal
体积
307.75
ų
晶胞参数 a
3.3434
Å
晶胞参数 b
10.3096
Å
晶胞参数 c
10.3096
Å
α 角
120.00
°
β 角
90.00
°
γ 角
90.00
°

组成

元素组成（原子分数）
组成信息
化学式
In3Ga3Sn5
In
3.00 · 27.3%
Ga
3.00 · 27.3%
Sn
5.00 · 45.5%

能量与稳定性

凸包上方能量
0.1327
eV/atom
形成能
0.1327
eV/atom
校正后总能量
-35.9513
eV
原始总能量
-35.9513
eV

电子结构

间接带隙
0.0000
eV
直接带隙
0.0000
eV
费米能级态密度
6.3415
总磁矩
0.0000
μB

其他信息

原型 ID

A3B3C5_87_spg189

分解产物

In Ga Sn

计算时间

2023-06-24 09:38:04.466885

引用参考

Alexandria 官方页面
https://alexandria.icams.rub.de/
参考引用

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm005680010).

文献引用

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX 
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

晶体结构 3D 渲染

加载 3D 结构...

样式: Ball & Stick
原始 CIF 数据 
# CIF generated by HEAS from Alexandria entry agm005680010
data_agm005680010
_cell_length_a     3.34340
_cell_length_b     10.30956
_cell_length_c     10.30956
_cell_angle_alpha  120.00000
_cell_angle_beta   90.00216
_cell_angle_gamma  90.00234
_cell_volume       307.75131
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  In1 In 1.00000 0.51068 0.51068 1.00000
  In2 In 0.00000 0.48932 0.00000 1.00000
  In3 In 0.00000 0.00000 0.48932 1.00000
  Ga1 Ga 0.50000 0.73392 0.73392 1.00000
  Ga2 Ga 0.50000 1.00000 0.26608 1.00000
  Ga3 Ga 0.50000 0.26608 1.00000 1.00000
  Sn1 Sn 0.50000 0.33333 0.66667 1.00000
  Sn2 Sn 0.50000 0.66667 0.33333 1.00000
  Sn3 Sn 0.50000 0.26274 0.26274 1.00000
  Sn4 Sn 0.50000 0.00000 0.73726 1.00000
  Sn5 Sn 0.50000 0.73726 0.00000 1.00000
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