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VGaH

Alexandria ALEX

Alex-ID: agm005686271 · 空间群: Imm2 (#44)

基础信息

化学式
VGaH
Alex-ID
agm005686271
元素数
3
位点数
6
空间群
Imm2 (#44)
晶系
orthorhombic
体积
63.50
ų
晶胞参数 a
2.9582
Å
晶胞参数 b
5.1577
Å
晶胞参数 c
5.1577
Å
α 角
58.71
°
β 角
73.34
°
γ 角
73.34
°

组成

元素组成(原子分数)
组成信息
化学式
VGaH
V
2.00 · 33.3%
Ga
2.00 · 33.3%
H
2.00 · 33.3%

能量与稳定性

凸包上方能量
0.0998
eV/atom
形成能
-0.1711
eV/atom
校正后总能量
-31.8022
eV
原始总能量
-31.8022
eV

电子结构

间接带隙
0.0000
eV
直接带隙
0.0239
eV
费米能级态密度
3.6669
总磁矩
0.0001
μB

其他信息

原型 ID

ABC_2240_spg12

分解产物

V2Ga5 V3GaH3 VH2

计算时间

2023-06-17 16:14:26.806793

引用参考

Alexandria 官方页面
https://alexandria.icams.rub.de/
参考引用

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm005686271).

文献引用

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

晶体结构 3D 渲染

加载 3D 结构...

样式: Ball & Stick
原始 CIF 数据
# CIF generated by HEAS from Alexandria entry agm005686271
data_agm005686271
_cell_length_a     2.95815
_cell_length_b     5.15772
_cell_length_c     5.15772
_cell_angle_alpha  58.70735
_cell_angle_beta   73.33534
_cell_angle_gamma  73.33534
_cell_volume       63.50135
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  V1 V 0.72392 0.95141 0.60074 1.00000
  V2 V 0.27608 0.39926 0.04859 1.00000
  Ga1 Ga 1.00000 0.94063 0.05937 1.00000
  Ga2 Ga 0.00000 0.44018 0.55982 1.00000
  H1 H 0.30672 0.01354 0.37302 1.00000
  H2 H 0.69328 0.62698 0.98646 1.00000
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