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Tm3Si8Os3

Alexandria ALEX

Alex-ID: agm005686400 · Space group: C2/m (#12)

Basic Information

Formula
Tm3Si8Os3
Alex-ID
agm005686400
Elements
3
Sites
14
Space group
C2/m (#12)
Crystal system
monoclinic
Volume
227.90
ų
Cell a
4.1677
Å
Cell b
7.7441
Å
Cell c
8.3284
Å
α angle
62.90
°
β angle
75.51
°
γ angle
74.39
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
Tm3Si8Os3
Tm
3.00 · 21.4%
Si
8.00 · 57.1%
Os
3.00 · 21.4%

Energy & Stability

Energy above hull
0.0891
eV/atom
Formation energy
-0.5718
eV/atom
Corrected total energy
-98.4926
eV
Raw total energy
-98.4926
eV

Electronic Structure

Indirect band gap
0.0000
eV
Direct band gap
0.0000
eV
DOS at Fermi level
4.0832
Total magnetisation
0.0000
μB

Additional Information

Prototype ID

A3B3C8_19_spg12

Decomposition

Tm5(Si7Os2)2 TmSi Tm2Si5Os3

Computed at

2023-06-29 11:03:49.320628

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm005686400).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data
# CIF generated by HEAS from Alexandria entry agm005686400
data_agm005686400
_cell_length_a     4.16771
_cell_length_b     7.74409
_cell_length_c     8.32840
_cell_angle_alpha  62.90194
_cell_angle_beta   75.51002
_cell_angle_gamma  74.38989
_cell_volume       227.89943
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Tm1 Tm 0.29492 0.75249 0.65768 1.00000
  Tm2 Tm 0.70508 0.24751 0.34232 1.00000
  Tm3 Tm 0.00000 0.00000 0.00000 1.00000
  Si1 Si 0.11780 0.14689 0.61750 1.00000
  Si2 Si 0.88220 0.85311 0.38250 1.00000
  Si3 Si 0.86016 0.43993 0.83974 1.00000
  Si4 Si 0.13984 0.56007 0.16026 1.00000
  Si5 Si 0.51542 0.66897 0.30018 1.00000
  Si6 Si 0.48458 0.33103 0.69982 1.00000
  Si7 Si 0.36183 0.02342 0.25292 1.00000
  Si8 Si 0.63817 0.97658 0.74708 1.00000
  Os1 Os 0.00000 0.50000 0.50000 1.00000
  Os2 Os 0.67398 0.65869 0.99336 1.00000
  Os3 Os 0.32602 0.34131 0.00664 1.00000
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