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NdSi2Pd

Alexandria ALEX

Alex-ID: agm005694167 · Space group: Pnma (#62)

Basic Information

Formula
NdSi2Pd
Alex-ID
agm005694167
Elements
3
Sites
32
Space group
Pnma (#62)
Crystal system
orthorhombic
Volume
608.17
ų
Cell a
4.1516
Å
Cell b
10.7003
Å
Cell c
13.6904
Å
α angle
90.00
°
β angle
90.00
°
γ angle
90.00
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
NdSi2Pd
Nd
8.00 · 25.0%
Si
16.00 · 50.0%
Pd
8.00 · 25.0%

Energy & Stability

Energy above hull
0.0254
eV/atom
Formation energy
-0.8308
eV/atom
Corrected total energy
-193.0762
eV
Raw total energy
-193.0762
eV

Electronic Structure

Indirect band gap
0.0000
eV
Direct band gap
0.0939
eV
DOS at Fermi level
11.4961
Total magnetisation
0.0000
μB

Additional Information

Prototype ID

ABC2_9020_spg62

Decomposition

Nd2Si5Pd3 Nd2Si3Pd

Computed at

2023-07-13 12:34:46.925355

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm005694167).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data
# CIF generated by HEAS from Alexandria entry agm005694167
data_agm005694167
_cell_length_a     4.15157
_cell_length_b     10.70034
_cell_length_c     13.69035
_cell_angle_alpha  90.00000
_cell_angle_beta   90.00000
_cell_angle_gamma  90.00000
_cell_volume       608.16889
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Nd1 Nd 0.75000 0.48187 0.70004 1.00000
  Nd2 Nd 0.25000 0.98187 0.79996 1.00000
  Nd3 Nd 0.25000 0.51813 0.29996 1.00000
  Nd4 Nd 0.75000 0.01813 0.20004 1.00000
  Nd5 Nd 0.75000 0.24784 0.94887 1.00000
  Nd6 Nd 0.25000 0.74784 0.55113 1.00000
  Nd7 Nd 0.25000 0.75216 0.05113 1.00000
  Nd8 Nd 0.75000 0.25216 0.44887 1.00000
  Si1 Si 0.75000 0.95724 0.97083 1.00000
  Si2 Si 0.25000 0.45724 0.52917 1.00000
  Si3 Si 0.25000 0.04276 0.02917 1.00000
  Si4 Si 0.75000 0.54276 0.47083 1.00000
  Si5 Si 0.75000 0.76790 0.88386 1.00000
  Si6 Si 0.25000 0.26790 0.61614 1.00000
  Si7 Si 0.25000 0.23210 0.11614 1.00000
  Si8 Si 0.75000 0.73210 0.38386 1.00000
  Si9 Si 0.75000 0.77537 0.71133 1.00000
  Si10 Si 0.25000 0.27537 0.78867 1.00000
  Si11 Si 0.25000 0.22463 0.28867 1.00000
  Si12 Si 0.75000 0.72463 0.21133 1.00000
  Si13 Si 0.75000 0.96777 0.62413 1.00000
  Si14 Si 0.25000 0.46777 0.87587 1.00000
  Si15 Si 0.25000 0.03223 0.37587 1.00000
  Si16 Si 0.75000 0.53223 0.12413 1.00000
  Pd1 Pd 0.75000 0.55639 0.94140 1.00000
  Pd2 Pd 0.25000 0.05639 0.55860 1.00000
  Pd3 Pd 0.25000 0.44361 0.05860 1.00000
  Pd4 Pd 0.75000 0.94361 0.44140 1.00000
  Pd5 Pd 0.75000 0.31375 0.20275 1.00000
  Pd6 Pd 0.25000 0.81375 0.29725 1.00000
  Pd7 Pd 0.25000 0.68625 0.79725 1.00000
  Pd8 Pd 0.75000 0.18625 0.70275 1.00000
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