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Ce2Ga3Os

Alexandria ALEX

Alex-ID: agm005697263 · Space group: Fddd (#70)

Basic Information

Formula
Ce2Ga3Os
Alex-ID
agm005697263
Elements
3
Sites
24
Space group
Fddd (#70)
Crystal system
orthorhombic
Volume
499.18
ų
Cell a
8.8155
Å
Cell b
8.9882
Å
Cell c
8.4667
Å
α angle
75.21
°
β angle
58.63
°
γ angle
60.63
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
Ce2Ga3Os
Ce
8.00 · 33.3%
Ga
12.00 · 50.0%
Os
4.00 · 16.7%

Energy & Stability

Energy above hull
0.0455
eV/atom
Formation energy
-0.4659
eV/atom
Corrected total energy
-139.9225
eV
Raw total energy
-139.9225
eV

Electronic Structure

Indirect band gap
0.0000
eV
Direct band gap
0.0003
eV
DOS at Fermi level
31.4430
Total magnetisation
2.1313
μB

Additional Information

Prototype ID

AB2C3_2224_spg70

Decomposition

CeGa2 CeGaOs

Computed at

2023-08-18 01:04:06.839019

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm005697263).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data
# CIF generated by HEAS from Alexandria entry agm005697263
data_agm005697263
_cell_length_a     8.81548
_cell_length_b     8.98819
_cell_length_c     8.46671
_cell_angle_alpha  75.20884
_cell_angle_beta   58.62772
_cell_angle_gamma  60.63363
_cell_volume       499.18208
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Ce1 Ce 0.87480 0.50000 0.25040 1.00000
  Ce2 Ce 0.12480 1.00000 0.75040 1.00000
  Ce3 Ce 0.87520 0.00000 0.24960 1.00000
  Ce4 Ce 0.62520 0.50000 0.74960 1.00000
  Ce5 Ce 0.36704 1.00000 0.26591 1.00000
  Ce6 Ce 0.63296 0.00000 0.73409 1.00000
  Ce7 Ce 0.38296 0.50000 0.23409 1.00000
  Ce8 Ce 0.11704 0.50000 0.76591 1.00000
  Ga1 Ga 0.33795 0.83225 0.98286 1.00000
  Ga2 Ga 0.15307 0.16775 0.01714 1.00000
  Ga3 Ga 0.82980 0.83225 0.01714 1.00000
  Ga4 Ga 0.67918 0.16775 0.98286 1.00000
  Ga5 Ga 0.41205 0.66775 0.51714 1.00000
  Ga6 Ga 0.59693 0.33225 0.48286 1.00000
  Ga7 Ga 0.92020 0.66775 0.48286 1.00000
  Ga8 Ga 0.41343 0.17314 0.50000 1.00000
  Ga9 Ga 0.66343 0.67314 0.00000 1.00000
  Ga10 Ga 0.33657 0.32686 1.00000 1.00000
  Ga11 Ga 0.08657 0.82686 0.50000 1.00000
  Ga12 Ga 0.07082 0.33225 0.51714 1.00000
  Os1 Os 0.57501 0.84997 0.50000 1.00000
  Os2 Os 0.17499 0.65003 1.00000 1.00000
  Os3 Os 0.92499 0.15003 0.50000 1.00000
  Os4 Os 0.82501 0.34997 0.00000 1.00000
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