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Tm3Ga6Ni5

Alexandria ALEX

Alex-ID: agm005708121 · Space group: Pmmn (#59)

Basic Information

Formula
Tm3Ga6Ni5
Alex-ID
agm005708121
Elements
3
Sites
28
Space group
Pmmn (#59)
Crystal system
orthorhombic
Volume
445.88
ų
Cell a
4.0824
Å
Cell b
8.8882
Å
Cell c
12.2882
Å
α angle
90.00
°
β angle
90.00
°
γ angle
90.00
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
Tm3Ga6Ni5
Tm
6.00 · 21.4%
Ga
12.00 · 42.9%
Ni
10.00 · 35.7%

Energy & Stability

Energy above hull
0.0103
eV/atom
Formation energy
-0.6055
eV/atom
Corrected total energy
-137.9740
eV
Raw total energy
-137.9740
eV

Electronic Structure

Indirect band gap
0.0000
eV
Direct band gap
0.0000
eV
DOS at Fermi level
14.7105
Total magnetisation
0.0000
μB

Additional Information

Prototype ID

A3B5C6_16_spg59

Decomposition

TmGa2Ni3 TmGa2Ni

Computed at

2023-06-30 12:10:45.454323

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm005708121).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data
# CIF generated by HEAS from Alexandria entry agm005708121
data_agm005708121
_cell_length_a     4.08236
_cell_length_b     8.88824
_cell_length_c     12.28824
_cell_angle_alpha  90.00000
_cell_angle_beta   90.00000
_cell_angle_gamma  90.00000
_cell_volume       445.87888
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Tm1 Tm 0.00000 0.24671 0.70022 1.00000
  Tm2 Tm 0.50000 0.75329 0.20022 1.00000
  Tm3 Tm 0.50000 0.75329 0.79978 1.00000
  Tm4 Tm 0.00000 0.26467 0.00000 1.00000
  Tm5 Tm 0.50000 0.73533 0.50000 1.00000
  Tm6 Tm 0.00000 0.24671 0.29978 1.00000
  Ga1 Ga 0.00000 0.98191 0.84892 1.00000
  Ga2 Ga 0.50000 0.01809 0.65108 1.00000
  Ga3 Ga 0.50000 0.41145 0.82162 1.00000
  Ga4 Ga 0.50000 0.58621 0.00000 1.00000
  Ga5 Ga 0.00000 0.41379 0.50000 1.00000
  Ga6 Ga 0.00000 0.58855 0.67838 1.00000
  Ga7 Ga 0.00000 0.58855 0.32162 1.00000
  Ga8 Ga 0.50000 0.96326 0.00000 1.00000
  Ga9 Ga 0.00000 0.98191 0.15108 1.00000
  Ga10 Ga 0.50000 0.41145 0.17838 1.00000
  Ga11 Ga 0.00000 0.03674 0.50000 1.00000
  Ga12 Ga 0.50000 0.01809 0.34892 1.00000
  Ni1 Ni 0.00000 0.54297 0.88761 1.00000
  Ni2 Ni 0.00000 0.86472 0.65732 1.00000
  Ni3 Ni 0.00000 0.78316 0.00000 1.00000
  Ni4 Ni 0.50000 0.45703 0.61239 1.00000
  Ni5 Ni 0.50000 0.21684 0.50000 1.00000
  Ni6 Ni 0.00000 0.54297 0.11239 1.00000
  Ni7 Ni 0.50000 0.45703 0.38761 1.00000
  Ni8 Ni 0.00000 0.86472 0.34268 1.00000
  Ni9 Ni 0.50000 0.13528 0.84268 1.00000
  Ni10 Ni 0.50000 0.13528 0.15732 1.00000
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