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Zr3GaSn2

Alexandria ALEX

Alex-ID: agm005742101 · Space group: Pnma (#62)

Basic Information

Formula
Zr3GaSn2
Alex-ID
agm005742101
Elements
3
Sites
24
Space group
Pnma (#62)
Crystal system
orthorhombic
Volume
523.31
ų
Cell a
4.0009
Å
Cell b
10.4200
Å
Cell c
12.5526
Å
α angle
90.00
°
β angle
90.00
°
γ angle
90.00
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
Zr3GaSn2
Zr
12.00 · 50.0%
Ga
4.00 · 16.7%
Sn
8.00 · 33.3%

Energy & Stability

Energy above hull
0.1664
eV/atom
Formation energy
-0.4247
eV/atom
Corrected total energy
-156.9094
eV
Raw total energy
-156.9094
eV

Electronic Structure

Indirect band gap
0.0000
eV
Direct band gap
0.0043
eV
DOS at Fermi level
16.6263
Total magnetisation
0.0000
μB

Additional Information

Prototype ID

AB2C3_2056_spg62

Decomposition

Zr5Sn4 Zr2Ga3 ZrSn2

Computed at

2023-08-18 04:19:06.928869

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm005742101).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data
# CIF generated by HEAS from Alexandria entry agm005742101
data_agm005742101
_cell_length_a     4.00090
_cell_length_b     10.42005
_cell_length_c     12.55259
_cell_angle_alpha  90.00000
_cell_angle_beta   90.00000
_cell_angle_gamma  90.00000
_cell_volume       523.31177
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Zr1 Zr 0.25000 0.42882 0.07511 1.00000
  Zr2 Zr 0.75000 0.57118 0.92489 1.00000
  Zr3 Zr 0.75000 0.92882 0.42489 1.00000
  Zr4 Zr 0.25000 0.07118 0.57511 1.00000
  Zr5 Zr 0.25000 0.76831 0.27915 1.00000
  Zr6 Zr 0.75000 0.23169 0.72085 1.00000
  Zr7 Zr 0.75000 0.26831 0.22085 1.00000
  Zr8 Zr 0.25000 0.73169 0.77915 1.00000
  Zr9 Zr 0.25000 0.45386 0.37060 1.00000
  Zr10 Zr 0.75000 0.54614 0.62940 1.00000
  Zr11 Zr 0.75000 0.95386 0.12940 1.00000
  Zr12 Zr 0.25000 0.04614 0.87060 1.00000
  Ga1 Ga 0.25000 0.14617 0.08657 1.00000
  Ga2 Ga 0.75000 0.85383 0.91343 1.00000
  Ga3 Ga 0.75000 0.64617 0.41343 1.00000
  Ga4 Ga 0.25000 0.35383 0.58657 1.00000
  Sn1 Sn 0.25000 0.75356 0.53898 1.00000
  Sn2 Sn 0.75000 0.24644 0.46102 1.00000
  Sn3 Sn 0.75000 0.25356 0.96102 1.00000
  Sn4 Sn 0.25000 0.74644 0.03898 1.00000
  Sn5 Sn 0.25000 0.06567 0.29794 1.00000
  Sn6 Sn 0.75000 0.93433 0.70206 1.00000
  Sn7 Sn 0.75000 0.56567 0.20206 1.00000
  Sn8 Sn 0.25000 0.43433 0.79794 1.00000
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