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In5GaAg

Alexandria ALEX

Alex-ID: agm005752132 · 空间群: C2/c (#15)

Alexandria Database API

基础信息

化学式
In5GaAg
Alex-ID
agm005752132
元素数
3
位点数
14
空间群
C2/c (#15)
晶系
monoclinic
体积
348.09
ų
晶胞参数 a
6.2485
Å
晶胞参数 b
7.2152
Å
晶胞参数 c
9.3364
Å
α 角
112.73
°
β 角
114.11
°
γ 角
90.00
°

组成

元素组成（原子分数）
组成信息
化学式
In5GaAg
In
10.00 · 71.4%
Ga
2.00 · 14.3%
Ag
2.00 · 14.3%

能量与稳定性

凸包上方能量
0.0764
eV/atom
形成能
0.0594
eV/atom
校正后总能量
-38.6267
eV
原始总能量
-38.6267
eV

电子结构

间接带隙
0.0000
eV
直接带隙
0.0110
eV
费米能级态密度
4.7116
总磁矩
0.0000
μB

其他信息

原型 ID

ABC5_559_spg74

分解产物

In2Ag5 Ga4Ag3 In

计算时间

2023-07-14 05:56:46.436758

引用参考

Alexandria 官方页面
https://alexandria.icams.rub.de/
参考引用

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm005752132).

文献引用

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX 
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

晶体结构 3D 渲染

加载 3D 结构...

样式: Ball & Stick
原始 CIF 数据 
# CIF generated by HEAS from Alexandria entry agm005752132
data_agm005752132
_cell_length_a     6.24847
_cell_length_b     7.21522
_cell_length_c     9.33639
_cell_angle_alpha  112.73088
_cell_angle_beta   114.10604
_cell_angle_gamma  90.00000
_cell_volume       348.09029
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  In1 In 0.49599 0.78887 0.85671 1.00000
  In2 In 0.38821 0.86184 0.27253 1.00000
  In3 In 0.99599 0.56783 0.85671 1.00000
  In4 In 0.75000 0.65843 0.50000 1.00000
  In5 In 0.11179 0.08931 0.72747 1.00000
  In6 In 0.88821 0.91069 0.27253 1.00000
  In7 In 0.25000 0.34157 0.50000 1.00000
  In8 In 0.00401 0.43217 0.14329 1.00000
  In9 In 0.61179 0.13816 0.72747 1.00000
  In10 In 0.50401 0.21113 0.14329 1.00000
  Ga1 Ga 0.00000 0.00000 0.00000 1.00000
  Ga2 Ga 0.50000 0.50000 0.00000 1.00000
  Ag1 Ag 0.75000 0.25841 0.50000 1.00000
  Ag2 Ag 0.25000 0.74159 0.50000 1.00000
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