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YZnSi2

Alexandria ALEX

Alex-ID: agm005752686 · Space group: Pnma (#62)

Basic Information

Formula
YZnSi2
Alex-ID
agm005752686
Elements
3
Sites
32
Space group
Pnma (#62)
Crystal system
orthorhombic
Volume
593.28
ų
Cell a
4.1634
Å
Cell b
10.4155
Å
Cell c
13.6816
Å
α angle
90.00
°
β angle
90.00
°
γ angle
90.00
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
YZnSi2
Y
8.00 · 25.0%
Zn
8.00 · 25.0%
Si
16.00 · 50.0%

Energy & Stability

Energy above hull
0.1015
eV/atom
Formation energy
-0.3963
eV/atom
Corrected total energy
-161.3807
eV
Raw total energy
-161.3807
eV

Electronic Structure

Indirect band gap
0.0000
eV
Direct band gap
0.0213
eV
DOS at Fermi level
9.6675
Total magnetisation
0.0000
μB

Additional Information

Prototype ID

ABC2_9189_spg62

Decomposition

YZn3Si Y3(ZnSi2)2 Si

Computed at

2023-07-13 13:20:42.596791

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm005752686).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data
# CIF generated by HEAS from Alexandria entry agm005752686
data_agm005752686
_cell_length_a     4.16336
_cell_length_b     10.41549
_cell_length_c     13.68165
_cell_angle_alpha  90.00000
_cell_angle_beta   90.00000
_cell_angle_gamma  90.00000
_cell_volume       593.28353
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Y1 Y 0.75000 0.44813 0.68588 1.00000
  Y2 Y 0.25000 0.94813 0.81412 1.00000
  Y3 Y 0.25000 0.55187 0.31412 1.00000
  Y4 Y 0.75000 0.05187 0.18588 1.00000
  Y5 Y 0.75000 0.23848 0.94609 1.00000
  Y6 Y 0.25000 0.73848 0.55391 1.00000
  Y7 Y 0.25000 0.76152 0.05391 1.00000
  Y8 Y 0.75000 0.26152 0.44609 1.00000
  Zn1 Zn 0.75000 0.54155 0.94495 1.00000
  Zn2 Zn 0.25000 0.04155 0.55505 1.00000
  Zn3 Zn 0.25000 0.45845 0.05505 1.00000
  Zn4 Zn 0.75000 0.95845 0.44495 1.00000
  Zn5 Zn 0.75000 0.35836 0.22738 1.00000
  Zn6 Zn 0.25000 0.85836 0.27262 1.00000
  Zn7 Zn 0.25000 0.64164 0.77262 1.00000
  Zn8 Zn 0.75000 0.14164 0.72738 1.00000
  Si1 Si 0.75000 0.95581 0.97724 1.00000
  Si2 Si 0.25000 0.45581 0.52276 1.00000
  Si3 Si 0.25000 0.04419 0.02276 1.00000
  Si4 Si 0.75000 0.54419 0.47724 1.00000
  Si5 Si 0.75000 0.76368 0.89035 1.00000
  Si6 Si 0.25000 0.26368 0.60965 1.00000
  Si7 Si 0.25000 0.23632 0.10965 1.00000
  Si8 Si 0.75000 0.73632 0.39035 1.00000
  Si9 Si 0.75000 0.74107 0.71362 1.00000
  Si10 Si 0.25000 0.24107 0.78638 1.00000
  Si11 Si 0.25000 0.25893 0.28638 1.00000
  Si12 Si 0.75000 0.75893 0.21362 1.00000
  Si13 Si 0.75000 0.94209 0.63277 1.00000
  Si14 Si 0.25000 0.44209 0.86723 1.00000
  Si15 Si 0.25000 0.05791 0.36723 1.00000
  Si16 Si 0.75000 0.55791 0.13277 1.00000
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