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HoZnSi2

Alexandria ALEX

Alex-ID: agm005753040 · Space group: Pnma (#62)

Basic Information

Formula
HoZnSi2
Alex-ID
agm005753040
Elements
3
Sites
32
Space group
Pnma (#62)
Crystal system
orthorhombic
Volume
586.91
ų
Cell a
4.1537
Å
Cell b
10.3687
Å
Cell c
13.6273
Å
α angle
90.00
°
β angle
90.00
°
γ angle
90.00
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
HoZnSi2
Ho
8.00 · 25.0%
Zn
8.00 · 25.0%
Si
16.00 · 50.0%

Energy & Stability

Energy above hull
0.1004
eV/atom
Formation energy
-0.3779
eV/atom
Corrected total energy
-145.7152
eV
Raw total energy
-145.7152
eV

Electronic Structure

Indirect band gap
0.0000
eV
Direct band gap
0.0337
eV
DOS at Fermi level
8.6689
Total magnetisation
0.0000
μB

Additional Information

Prototype ID

ABC2_9189_spg62

Decomposition

HoZn3Si Ho3(ZnSi2)2 Si

Computed at

2023-07-13 13:48:16.514590

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm005753040).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data
# CIF generated by HEAS from Alexandria entry agm005753040
data_agm005753040
_cell_length_a     4.15373
_cell_length_b     10.36866
_cell_length_c     13.62730
_cell_angle_alpha  90.00000
_cell_angle_beta   90.00000
_cell_angle_gamma  90.00000
_cell_volume       586.90943
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Ho1 Ho 0.75000 0.44516 0.68499 1.00000
  Ho2 Ho 0.25000 0.94516 0.81501 1.00000
  Ho3 Ho 0.25000 0.55484 0.31501 1.00000
  Ho4 Ho 0.75000 0.05484 0.18499 1.00000
  Ho5 Ho 0.75000 0.23788 0.94615 1.00000
  Ho6 Ho 0.25000 0.73788 0.55385 1.00000
  Ho7 Ho 0.25000 0.76212 0.05385 1.00000
  Ho8 Ho 0.75000 0.26212 0.44615 1.00000
  Zn1 Zn 0.75000 0.54017 0.94491 1.00000
  Zn2 Zn 0.25000 0.04017 0.55509 1.00000
  Zn3 Zn 0.25000 0.45983 0.05509 1.00000
  Zn4 Zn 0.75000 0.95983 0.44491 1.00000
  Zn5 Zn 0.75000 0.36400 0.23289 1.00000
  Zn6 Zn 0.25000 0.86400 0.26711 1.00000
  Zn7 Zn 0.25000 0.63600 0.76711 1.00000
  Zn8 Zn 0.75000 0.13600 0.73289 1.00000
  Si1 Si 0.75000 0.95505 0.97778 1.00000
  Si2 Si 0.25000 0.45505 0.52222 1.00000
  Si3 Si 0.25000 0.04495 0.02222 1.00000
  Si4 Si 0.75000 0.54495 0.47778 1.00000
  Si5 Si 0.75000 0.76250 0.89072 1.00000
  Si6 Si 0.25000 0.26250 0.60928 1.00000
  Si7 Si 0.25000 0.23750 0.10928 1.00000
  Si8 Si 0.75000 0.73750 0.39072 1.00000
  Si9 Si 0.75000 0.73852 0.71346 1.00000
  Si10 Si 0.25000 0.23852 0.78654 1.00000
  Si11 Si 0.25000 0.26148 0.28654 1.00000
  Si12 Si 0.75000 0.76148 0.21346 1.00000
  Si13 Si 0.75000 0.94031 0.63325 1.00000
  Si14 Si 0.25000 0.44031 0.86675 1.00000
  Si15 Si 0.25000 0.05969 0.36675 1.00000
  Si16 Si 0.75000 0.55969 0.13325 1.00000
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