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TbZnSi2

Alexandria ALEX

Alex-ID: agm005753048 · Space group: Pnma (#62)

Basic Information

Formula
TbZnSi2
Alex-ID
agm005753048
Elements
3
Sites
32
Space group
Pnma (#62)
Crystal system
orthorhombic
Volume
592.43
ų
Cell a
4.1599
Å
Cell b
10.4520
Å
Cell c
13.6257
Å
α angle
90.00
°
β angle
90.00
°
γ angle
90.00
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
TbZnSi2
Tb
8.00 · 25.0%
Zn
8.00 · 25.0%
Si
16.00 · 50.0%

Energy & Stability

Energy above hull
0.0963
eV/atom
Formation energy
-0.4047
eV/atom
Corrected total energy
-147.0029
eV
Raw total energy
-147.0029
eV

Electronic Structure

Indirect band gap
0.0000
eV
Direct band gap
0.0077
eV
DOS at Fermi level
10.1079
Total magnetisation
0.0000
μB

Additional Information

Prototype ID

ABC2_9189_spg62

Decomposition

Tb2ZnSi3 TbZn11 Si

Computed at

2023-07-13 13:17:16.689886

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm005753048).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data
# CIF generated by HEAS from Alexandria entry agm005753048
data_agm005753048
_cell_length_a     4.15988
_cell_length_b     10.45196
_cell_length_c     13.62567
_cell_angle_alpha  89.99999
_cell_angle_beta   90.00000
_cell_angle_gamma  90.00000
_cell_volume       592.42960
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Tb1 Tb 0.75000 0.44949 0.68781 1.00000
  Tb2 Tb 0.25000 0.94949 0.81219 1.00000
  Tb3 Tb 0.25000 0.55051 0.31219 1.00000
  Tb4 Tb 0.75000 0.05051 0.18781 1.00000
  Tb5 Tb 0.75000 0.23897 0.94753 1.00000
  Tb6 Tb 0.25000 0.73897 0.55247 1.00000
  Tb7 Tb 0.25000 0.76103 0.05247 1.00000
  Tb8 Tb 0.75000 0.26103 0.44753 1.00000
  Zn1 Zn 0.75000 0.54284 0.94441 1.00000
  Zn2 Zn 0.25000 0.04284 0.55559 1.00000
  Zn3 Zn 0.25000 0.45716 0.05559 1.00000
  Zn4 Zn 0.75000 0.95716 0.44441 1.00000
  Zn5 Zn 0.75000 0.35472 0.22378 1.00000
  Zn6 Zn 0.25000 0.85472 0.27622 1.00000
  Zn7 Zn 0.25000 0.64528 0.77622 1.00000
  Zn8 Zn 0.75000 0.14528 0.72378 1.00000
  Si1 Si 0.75000 0.95668 0.97647 1.00000
  Si2 Si 0.25000 0.45668 0.52353 1.00000
  Si3 Si 0.25000 0.04332 0.02353 1.00000
  Si4 Si 0.75000 0.54332 0.47647 1.00000
  Si5 Si 0.75000 0.76488 0.88918 1.00000
  Si6 Si 0.25000 0.26488 0.61082 1.00000
  Si7 Si 0.25000 0.23512 0.11082 1.00000
  Si8 Si 0.75000 0.73512 0.38918 1.00000
  Si9 Si 0.75000 0.74131 0.71183 1.00000
  Si10 Si 0.25000 0.24131 0.78817 1.00000
  Si11 Si 0.25000 0.25869 0.28817 1.00000
  Si12 Si 0.75000 0.75869 0.21183 1.00000
  Si13 Si 0.75000 0.94294 0.63244 1.00000
  Si14 Si 0.25000 0.44294 0.86756 1.00000
  Si15 Si 0.25000 0.05706 0.36756 1.00000
  Si16 Si 0.75000 0.55706 0.13244 1.00000
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