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HoAlSi2

Alexandria ALEX

Alex-ID: agm005753415 · Space group: Pnma (#62)

Basic Information

Formula
HoAlSi2
Alex-ID
agm005753415
Elements
3
Sites
32
Space group
Pnma (#62)
Crystal system
orthorhombic
Volume
597.09
ų
Cell a
4.1521
Å
Cell b
11.2167
Å
Cell c
12.8205
Å
α angle
90.00
°
β angle
90.00
°
γ angle
90.00
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
HoAlSi2
Ho
8.00 · 25.0%
Al
8.00 · 25.0%
Si
16.00 · 50.0%

Energy & Stability

Energy above hull
0.1222
eV/atom
Formation energy
-0.3475
eV/atom
Corrected total energy
-164.4818
eV
Raw total energy
-164.4818
eV

Electronic Structure

Indirect band gap
0.0000
eV
Direct band gap
0.0124
eV
DOS at Fermi level
10.4404
Total magnetisation
0.0000
μB

Additional Information

Prototype ID

ABC2_549_spg62

Decomposition

Ho10Si17 Ho2Al3Si2 Si

Computed at

2023-07-11 19:32:05.941814

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm005753415).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data
# CIF generated by HEAS from Alexandria entry agm005753415
data_agm005753415
_cell_length_a     4.15208
_cell_length_b     11.21670
_cell_length_c     12.82052
_cell_angle_alpha  90.00001
_cell_angle_beta   90.00000
_cell_angle_gamma  90.00000
_cell_volume       597.08578
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Ho1 Ho 0.75000 0.46364 0.69960 1.00000
  Ho2 Ho 0.25000 0.96364 0.80040 1.00000
  Ho3 Ho 0.25000 0.53636 0.30040 1.00000
  Ho4 Ho 0.75000 0.03636 0.19960 1.00000
  Ho5 Ho 0.75000 0.22723 0.94916 1.00000
  Ho6 Ho 0.25000 0.72723 0.55084 1.00000
  Ho7 Ho 0.25000 0.77277 0.05084 1.00000
  Ho8 Ho 0.75000 0.27277 0.44916 1.00000
  Al1 Al 0.75000 0.55243 0.93474 1.00000
  Al2 Al 0.25000 0.05243 0.56526 1.00000
  Al3 Al 0.25000 0.44757 0.06526 1.00000
  Al4 Al 0.75000 0.94757 0.43474 1.00000
  Al5 Al 0.75000 0.34563 0.18993 1.00000
  Al6 Al 0.25000 0.84563 0.31007 1.00000
  Al7 Al 0.25000 0.65437 0.81007 1.00000
  Al8 Al 0.75000 0.15437 0.68993 1.00000
  Si1 Si 0.75000 0.96419 0.97148 1.00000
  Si2 Si 0.25000 0.46419 0.52852 1.00000
  Si3 Si 0.25000 0.03581 0.02852 1.00000
  Si4 Si 0.75000 0.53581 0.47148 1.00000
  Si5 Si 0.75000 0.77877 0.89064 1.00000
  Si6 Si 0.25000 0.27877 0.60936 1.00000
  Si7 Si 0.25000 0.22123 0.10936 1.00000
  Si8 Si 0.75000 0.72123 0.39064 1.00000
  Si9 Si 0.75000 0.72881 0.71042 1.00000
  Si10 Si 0.25000 0.22881 0.78958 1.00000
  Si11 Si 0.25000 0.27119 0.28958 1.00000
  Si12 Si 0.75000 0.77119 0.21042 1.00000
  Si13 Si 0.75000 0.92665 0.63071 1.00000
  Si14 Si 0.25000 0.42665 0.86929 1.00000
  Si15 Si 0.25000 0.07335 0.36929 1.00000
  Si16 Si 0.75000 0.57335 0.13071 1.00000
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