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Y2GeSb

Alexandria ALEX

Alex-ID: agm005753791 · 空间群: Cmcm (#63)

基础信息

化学式
Y2GeSb
Alex-ID
agm005753791
元素数
3
位点数
8
空间群
Cmcm (#63)
晶系
orthorhombic
体积
212.26
ų
晶胞参数 a
4.1715
Å
晶胞参数 b
4.3810
Å
晶胞参数 c
11.8195
Å
α 角
100.68
°
β 角
90.00
°
γ 角
90.00
°

组成

元素组成(原子分数)
组成信息
化学式
Y2GeSb
Y
4.00 · 50.0%
Ge
2.00 · 25.0%
Sb
2.00 · 25.0%

能量与稳定性

凸包上方能量
0.0571
eV/atom
形成能
-0.9738
eV/atom
校正后总能量
-51.1224
eV
原始总能量
-51.1224
eV

电子结构

间接带隙
0.0000
eV
直接带隙
0.0706
eV
费米能级态密度
2.9856
总磁矩
0.0000
μB

其他信息

原型 ID

ABC2_434_spg63

分解产物

YGe YSb

计算时间

2023-07-12 03:10:27.665280

引用参考

Alexandria 官方页面
https://alexandria.icams.rub.de/
参考引用

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm005753791).

文献引用

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

晶体结构 3D 渲染

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样式: Ball & Stick
原始 CIF 数据
# CIF generated by HEAS from Alexandria entry agm005753791
data_agm005753791
_cell_length_a     4.17148
_cell_length_b     4.38099
_cell_length_c     11.81949
_cell_angle_alpha  100.68030
_cell_angle_beta   90.00000
_cell_angle_gamma  90.00000
_cell_volume       212.26166
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Y1 Y 0.75000 0.67727 0.35455 1.00000
  Y2 Y 0.25000 0.32273 0.64545 1.00000
  Y3 Y 0.75000 0.93936 0.87872 1.00000
  Y4 Y 0.25000 0.06064 0.12128 1.00000
  Ge1 Ge 0.25000 0.45789 0.91579 1.00000
  Ge2 Ge 0.75000 0.54211 0.08421 1.00000
  Sb1 Sb 0.25000 0.18936 0.37873 1.00000
  Sb2 Sb 0.75000 0.81064 0.62127 1.00000
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