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Ho2Ga12Pt

Alexandria ALEX

Alex-ID: agm005769005 · Space group: P4/nbm (#125)

Alexandria Database API

Basic Information

Formula
Ho2Ga12Pt
Alex-ID
agm005769005
Elements
3
Sites
30
Space group
P4/nbm (#125)
Crystal system
tetragonal
Volume
574.94
ų
Cell a
6.1221
Å
Cell b
6.1221
Å
Cell c
15.3396
Å
α angle
90.00
°
β angle
90.00
°
γ angle
90.00
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
Ho2Ga12Pt
Ho
4.00 · 13.3%
Ga
24.00 · 80.0%
Pt
2.00 · 6.7%

Energy & Stability

Energy above hull
0.0250
eV/atom
Formation energy
-0.3888
eV/atom
Corrected total energy
-114.8589
eV
Raw total energy
-114.8589
eV

Electronic Structure

Indirect band gap
0.0000
eV
Direct band gap
0.0000
eV
DOS at Fermi level
9.0479
Total magnetisation
0.0000
μB

Additional Information

Prototype ID

AB2C12_6_spg125

Decomposition

Ga5Pt Ho4Ga12Pt Ga

Computed at

2023-07-16 20:29:31.353777

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm005769005).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX 
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data 
# CIF generated by HEAS from Alexandria entry agm005769005
data_agm005769005
_cell_length_a     6.12214
_cell_length_b     6.12214
_cell_length_c     15.33956
_cell_angle_alpha  90.00000
_cell_angle_beta   90.00000
_cell_angle_gamma  90.00000
_cell_volume       574.93545
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Ho1 Ho 0.50000 0.00000 0.24148 1.00000
  Ho2 Ho 0.00000 0.50000 0.24148 1.00000
  Ho3 Ho 0.00000 0.50000 0.75852 1.00000
  Ho4 Ho 0.50000 0.00000 0.75852 1.00000
  Ga1 Ga 0.50000 0.50000 0.80961 1.00000
  Ga2 Ga 0.00000 0.00000 0.80961 1.00000
  Ga3 Ga 0.75018 0.74982 0.90841 1.00000
  Ga4 Ga 0.25018 0.75018 0.90841 1.00000
  Ga5 Ga 0.00000 0.00000 0.34850 1.00000
  Ga6 Ga 0.24982 0.74982 0.09159 1.00000
  Ga7 Ga 0.83548 0.33548 0.56885 1.00000
  Ga8 Ga 0.50000 0.50000 0.34850 1.00000
  Ga9 Ga 0.24982 0.25018 0.90841 1.00000
  Ga10 Ga 0.74982 0.75018 0.09159 1.00000
  Ga11 Ga 0.33548 0.16452 0.56885 1.00000
  Ga12 Ga 0.66452 0.16452 0.43115 1.00000
  Ga13 Ga 0.00000 0.00000 0.65150 1.00000
  Ga14 Ga 0.16452 0.33548 0.43115 1.00000
  Ga15 Ga 0.25018 0.24982 0.09159 1.00000
  Ga16 Ga 0.83548 0.66452 0.43115 1.00000
  Ga17 Ga 0.66452 0.83548 0.56885 1.00000
  Ga18 Ga 0.00000 0.00000 0.19039 1.00000
  Ga19 Ga 0.16452 0.66452 0.56885 1.00000
  Ga20 Ga 0.50000 0.50000 0.65150 1.00000
  Ga21 Ga 0.74982 0.24982 0.90841 1.00000
  Ga22 Ga 0.50000 0.50000 0.19039 1.00000
  Ga23 Ga 0.33548 0.83548 0.43115 1.00000
  Ga24 Ga 0.75018 0.25018 0.09159 1.00000
  Pt1 Pt 0.50000 0.00000 0.00000 1.00000
  Pt2 Pt 0.00000 0.50000 0.00000 1.00000
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