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ThNi5Sn

Alexandria ALEX

Alex-ID: agm005771192 · 空间群: Pnma (#62)

基础信息

化学式
ThNi5Sn
Alex-ID
agm005771192
元素数
3
位点数
28
空间群
Pnma (#62)
晶系
orthorhombic
体积
418.59
ų
晶胞参数 a
4.9695
Å
晶胞参数 b
8.1463
Å
晶胞参数 c
10.3398
Å
α 角
90.00
°
β 角
90.00
°
γ 角
90.00
°

组成

元素组成(原子分数)
组成信息
化学式
ThNi5Sn
Th
4.00 · 14.3%
Ni
20.00 · 71.4%
Sn
4.00 · 14.3%

能量与稳定性

凸包上方能量
0.0000
eV/atom
形成能
-0.4030
eV/atom
校正后总能量
-172.6622
eV
原始总能量
-172.6622
eV

电子结构

间接带隙
0.0000
eV
直接带隙
0.0009
eV
费米能级态密度
29.4611
总磁矩
-0.0006
μB

其他信息

原型 ID

ABC5_91_spg62

分解产物

ThNi5Sn

计算时间

2023-07-17 13:49:12.693946

引用参考

Alexandria 官方页面
https://alexandria.icams.rub.de/
参考引用

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm005771192).

文献引用

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

晶体结构 3D 渲染

加载 3D 结构...

样式: Ball & Stick
原始 CIF 数据
# CIF generated by HEAS from Alexandria entry agm005771192
data_agm005771192
_cell_length_a     4.96952
_cell_length_b     8.14626
_cell_length_c     10.33982
_cell_angle_alpha  90.00000
_cell_angle_beta   90.00000
_cell_angle_gamma  90.00000
_cell_volume       418.58725
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Th1 Th 0.25000 0.25493 0.94386 1.00000
  Th2 Th 0.75000 0.24507 0.44386 1.00000
  Th3 Th 0.25000 0.75493 0.55614 1.00000
  Th4 Th 0.75000 0.74507 0.05614 1.00000
  Ni1 Ni 0.25000 0.58717 0.01842 1.00000
  Ni2 Ni 0.75000 0.91283 0.51842 1.00000
  Ni3 Ni 0.25000 0.08717 0.48158 1.00000
  Ni4 Ni 0.75000 0.41283 0.98158 1.00000
  Ni5 Ni 0.75000 0.31998 0.75192 1.00000
  Ni6 Ni 0.25000 0.18002 0.25192 1.00000
  Ni7 Ni 0.75000 0.81998 0.74808 1.00000
  Ni8 Ni 0.25000 0.68002 0.24808 1.00000
  Ni9 Ni 0.25000 0.93869 0.10097 1.00000
  Ni10 Ni 0.75000 0.56131 0.60097 1.00000
  Ni11 Ni 0.25000 0.43869 0.39903 1.00000
  Ni12 Ni 0.75000 0.06131 0.89903 1.00000
  Ni13 Ni 0.99979 0.42948 0.19102 1.00000
  Ni14 Ni 0.00021 0.07052 0.69102 1.00000
  Ni15 Ni 0.50021 0.92948 0.30898 1.00000
  Ni16 Ni 0.49979 0.57052 0.80898 1.00000
  Ni17 Ni 0.00021 0.57052 0.80898 1.00000
  Ni18 Ni 0.99979 0.92948 0.30898 1.00000
  Ni19 Ni 0.49979 0.07052 0.69102 1.00000
  Ni20 Ni 0.50021 0.42948 0.19102 1.00000
  Sn1 Sn 0.25000 0.85967 0.85796 1.00000
  Sn2 Sn 0.75000 0.64033 0.35796 1.00000
  Sn3 Sn 0.25000 0.35967 0.64204 1.00000
  Sn4 Sn 0.75000 0.14033 0.14204 1.00000
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