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LaSmSi4

Alexandria ALEX

Alex-ID: agm005777464 · 空间群: I-4m2 (#119)

基础信息

化学式
LaSmSi4
Alex-ID
agm005777464
元素数
3
位点数
6
空间群
I-4m2 (#119)
晶系
tetragonal
体积
126.03
ų
晶胞参数 a
4.3057
Å
晶胞参数 b
4.3057
Å
晶胞参数 c
7.4491
Å
α 角
106.80
°
β 角
106.80
°
γ 角
90.00
°

组成

元素组成(原子分数)
组成信息
化学式
LaSmSi4
La
1.00 · 16.7%
Sm
1.00 · 16.7%
Si
4.00 · 66.7%

能量与稳定性

凸包上方能量
0.0193
eV/atom
形成能
-0.6256
eV/atom
校正后总能量
-35.0964
eV
原始总能量
-35.0964
eV

电子结构

间接带隙
0.0000
eV
直接带隙
0.0000
eV
费米能级态密度
2.5675
总磁矩
0.0000
μB

其他信息

原型 ID

ABC4_479_spg119

分解产物

Sm4Si7 LaSi2 Si

计算时间

2023-07-31 07:47:20.334443

引用参考

Alexandria 官方页面
https://alexandria.icams.rub.de/
参考引用

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm005777464).

文献引用

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

晶体结构 3D 渲染

加载 3D 结构...

样式: Ball & Stick
原始 CIF 数据
# CIF generated by HEAS from Alexandria entry agm005777464
data_agm005777464
_cell_length_a     4.30566
_cell_length_b     4.30566
_cell_length_c     7.44906
_cell_angle_alpha  106.79851
_cell_angle_beta   106.79851
_cell_angle_gamma  89.99999
_cell_volume       126.03491
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  La1 La 0.25000 0.75000 0.50000 1.00000
  Sm1 Sm 0.00000 0.00000 0.00000 1.00000
  Si1 Si 0.66327 0.16327 0.32655 1.00000
  Si2 Si 0.58508 0.58508 0.17015 1.00000
  Si3 Si 0.83673 0.33673 0.67345 1.00000
  Si4 Si 0.41492 0.41492 0.82985 1.00000
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