导航

HEAS Data Platform · 材料科学计算数据库

AcSmSi4

Alexandria ALEX

Alex-ID: agm005777548 · 空间群: Pbam (#55)

基础信息

化学式
AcSmSi4
Alex-ID
agm005777548
元素数
3
位点数
24
空间群
Pbam (#55)
晶系
orthorhombic
体积
541.76
ų
晶胞参数 a
4.3409
Å
晶胞参数 b
8.0286
Å
晶胞参数 c
15.5449
Å
α 角
90.00
°
β 角
90.00
°
γ 角
90.00
°

组成

元素组成(原子分数)
组成信息
化学式
AcSmSi4
Ac
4.00 · 16.7%
Sm
4.00 · 16.7%
Si
16.00 · 66.7%

能量与稳定性

凸包上方能量
0.1022
eV/atom
形成能
-0.4886
eV/atom
校正后总能量
-133.8218
eV
原始总能量
-133.8218
eV

电子结构

间接带隙
0.0000
eV
直接带隙
0.0128
eV
费米能级态密度
8.6899
总磁矩
0.0000
μB

其他信息

原型 ID

ABC4_302_spg55

分解产物

Sm4Si7 AcSi2 Si

计算时间

2023-07-31 08:54:44.306642

引用参考

Alexandria 官方页面
https://alexandria.icams.rub.de/
参考引用

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm005777548).

文献引用

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

晶体结构 3D 渲染

加载 3D 结构...

样式: Ball & Stick
原始 CIF 数据
# CIF generated by HEAS from Alexandria entry agm005777548
data_agm005777548
_cell_length_a     4.34088
_cell_length_b     8.02856
_cell_length_c     15.54491
_cell_angle_alpha  90.00000
_cell_angle_beta   90.00000
_cell_angle_gamma  90.00000
_cell_volume       541.75595
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Ac1 Ac 0.00000 0.62817 0.34925 1.00000
  Ac2 Ac 0.00000 0.37183 0.65075 1.00000
  Ac3 Ac 0.00000 0.12817 0.15075 1.00000
  Ac4 Ac 0.00000 0.87183 0.84925 1.00000
  Sm1 Sm 0.00000 0.63521 0.08878 1.00000
  Sm2 Sm 0.00000 0.36479 0.91122 1.00000
  Sm3 Sm 0.00000 0.13521 0.41122 1.00000
  Sm4 Sm 0.00000 0.86479 0.58878 1.00000
  Si1 Si 0.50000 0.78723 0.19702 1.00000
  Si2 Si 0.50000 0.21277 0.80298 1.00000
  Si3 Si 0.50000 0.28723 0.30298 1.00000
  Si4 Si 0.50000 0.71277 0.69702 1.00000
  Si5 Si 0.50000 0.88194 0.04743 1.00000
  Si6 Si 0.50000 0.11806 0.95257 1.00000
  Si7 Si 0.50000 0.38194 0.45257 1.00000
  Si8 Si 0.50000 0.61806 0.54743 1.00000
  Si9 Si 0.50000 0.87208 0.45204 1.00000
  Si10 Si 0.50000 0.12792 0.54796 1.00000
  Si11 Si 0.50000 0.37208 0.04796 1.00000
  Si12 Si 0.50000 0.62792 0.95204 1.00000
  Si13 Si 0.50000 0.98575 0.30496 1.00000
  Si14 Si 0.50000 0.01425 0.69504 1.00000
  Si15 Si 0.50000 0.48575 0.19504 1.00000
  Si16 Si 0.50000 0.51425 0.80496 1.00000
获取直接链接