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AcTbSi4

Alexandria ALEX

Alex-ID: agm005777664 · Space group: Pbam (#55)

Basic Information

Formula
AcTbSi4
Alex-ID
agm005777664
Elements
3
Sites
24
Space group
Pbam (#55)
Crystal system
orthorhombic
Volume
529.18
ų
Cell a
4.2699
Å
Cell b
8.0047
Å
Cell c
15.4826
Å
α angle
90.00
°
β angle
90.00
°
γ angle
90.00
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
AcTbSi4
Ac
4.00 · 16.7%
Tb
4.00 · 16.7%
Si
16.00 · 66.7%

Energy & Stability

Energy above hull
0.0855
eV/atom
Formation energy
-0.5056
eV/atom
Corrected total energy
-133.8656
eV
Raw total energy
-133.8656
eV

Electronic Structure

Indirect band gap
0.0000
eV
Direct band gap
0.0313
eV
DOS at Fermi level
8.0624
Total magnetisation
0.0000
μB

Additional Information

Prototype ID

ABC4_302_spg55

Decomposition

Tb10Si17 AcSi2 Si

Computed at

2023-07-31 08:36:01.738438

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm005777664).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data
# CIF generated by HEAS from Alexandria entry agm005777664
data_agm005777664
_cell_length_a     4.26987
_cell_length_b     8.00471
_cell_length_c     15.48262
_cell_angle_alpha  90.00000
_cell_angle_beta   90.00000
_cell_angle_gamma  90.00000
_cell_volume       529.18174
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Ac1 Ac 0.00000 0.62763 0.34929 1.00000
  Ac2 Ac 0.00000 0.37237 0.65071 1.00000
  Ac3 Ac 0.00000 0.12763 0.15071 1.00000
  Ac4 Ac 0.00000 0.87237 0.84929 1.00000
  Tb1 Tb 0.00000 0.63443 0.08855 1.00000
  Tb2 Tb 0.00000 0.36557 0.91145 1.00000
  Tb3 Tb 0.00000 0.13443 0.41145 1.00000
  Tb4 Tb 0.00000 0.86557 0.58855 1.00000
  Si1 Si 0.50000 0.78642 0.19648 1.00000
  Si2 Si 0.50000 0.21358 0.80352 1.00000
  Si3 Si 0.50000 0.28642 0.30352 1.00000
  Si4 Si 0.50000 0.71358 0.69648 1.00000
  Si5 Si 0.50000 0.88000 0.04678 1.00000
  Si6 Si 0.50000 0.12000 0.95322 1.00000
  Si7 Si 0.50000 0.38000 0.45322 1.00000
  Si8 Si 0.50000 0.62000 0.54678 1.00000
  Si9 Si 0.50000 0.87333 0.45250 1.00000
  Si10 Si 0.50000 0.12667 0.54750 1.00000
  Si11 Si 0.50000 0.37333 0.04750 1.00000
  Si12 Si 0.50000 0.62667 0.95250 1.00000
  Si13 Si 0.50000 0.98497 0.30550 1.00000
  Si14 Si 0.50000 0.01503 0.69450 1.00000
  Si15 Si 0.50000 0.48497 0.19450 1.00000
  Si16 Si 0.50000 0.51503 0.80550 1.00000
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