GaTcH5
Alexandria ALEXAlex-ID: agm005779595 · Space group: Cm (#8)
Basic Information
Composition
Energy & Stability
Electronic Structure
Additional Information
ABC5_624_spg8
Ga2TcH5 H2 Tc4H3
2023-07-10 00:56:31.617927
Citation
The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm005779595).
Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620
@article{Cavignac2026Alexandria,
author = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
and Marques, Miguel A. L.},
title = {{AI}-Driven expansion and application of the {A}lexandria database},
journal = {Journal of Physics: Materials},
year = {2026},
volume = {9},
number = {2},
pages = {025014},
doi = {10.1088/2515-7639/ae6620},
url = {https://doi.org/10.1088/2515-7639/ae6620}
}3D Crystal Structure Rendering
Loading 3D structure…
# CIF generated by HEAS from Alexandria entry agm005779595
data_agm005779595
_cell_length_a 3.49968
_cell_length_b 4.35685
_cell_length_c 4.35685
_cell_angle_alpha 80.34940
_cell_angle_beta 66.78561
_cell_angle_gamma 66.78563
_cell_volume 56.10399
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
Ga1 Ga 0.70623 0.05910 0.05910 1.00000
Tc1 Tc 0.54939 0.49240 0.49240 1.00000
H1 H 0.00926 0.21939 0.21939 1.00000
H2 H 0.96782 0.57313 0.57313 1.00000
H3 H 0.25114 0.80269 0.80269 1.00000
H4 H 0.52343 0.13334 0.71996 1.00000
H5 H 0.52343 0.71996 0.13334 1.00000
