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TmScSi4

Alexandria ALEX

Alex-ID: agm005830002 · Space group: Pbam (#55)

Basic Information

Formula
TmScSi4
Alex-ID
agm005830002
Elements
3
Sites
24
Space group
Pbam (#55)
Crystal system
orthorhombic
Volume
434.60
ų
Cell a
3.8655
Å
Cell b
6.6397
Å
Cell c
16.9329
Å
α angle
90.00
°
β angle
90.00
°
γ angle
90.00
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
TmScSi4
Tm
4.00 · 16.7%
Sc
4.00 · 16.7%
Si
16.00 · 66.7%

Energy & Stability

Energy above hull
0.1241
eV/atom
Formation energy
-0.4414
eV/atom
Corrected total energy
-140.5738
eV
Raw total energy
-140.5738
eV

Electronic Structure

Indirect band gap
0.0000
eV
Direct band gap
0.0326
eV
DOS at Fermi level
9.4361
Total magnetisation
0.0000
μB

Additional Information

Prototype ID

ABC4_2787_spg55

Decomposition

Tm(ScSi2)2 Tm3Si5 Si

Computed at

2023-07-31 08:35:49.454688

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm005830002).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data
# CIF generated by HEAS from Alexandria entry agm005830002
data_agm005830002
_cell_length_a     3.86553
_cell_length_b     6.63972
_cell_length_c     16.93292
_cell_angle_alpha  90.00000
_cell_angle_beta   90.00000
_cell_angle_gamma  90.00000
_cell_volume       434.60048
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Tm1 Tm 0.00000 0.61919 0.31251 1.00000
  Tm2 Tm 1.00000 0.38081 0.68749 1.00000
  Tm3 Tm 1.00000 0.11919 0.18749 1.00000
  Tm4 Tm 0.00000 0.88081 0.81251 1.00000
  Sc1 Sc 0.00000 0.63070 0.08628 1.00000
  Sc2 Sc 1.00000 0.36930 0.91372 1.00000
  Sc3 Sc 1.00000 0.13070 0.41372 1.00000
  Sc4 Sc 0.00000 0.86930 0.58628 1.00000
  Si1 Si 0.50000 0.79340 0.19431 1.00000
  Si2 Si 0.50000 0.20660 0.80569 1.00000
  Si3 Si 0.50000 0.29340 0.30569 1.00000
  Si4 Si 0.50000 0.70660 0.69431 1.00000
  Si5 Si 0.50000 0.95011 0.06939 1.00000
  Si6 Si 0.50000 0.04989 0.93061 1.00000
  Si7 Si 0.50000 0.45011 0.43061 1.00000
  Si8 Si 0.50000 0.54989 0.56939 1.00000
  Si9 Si 0.50000 0.82117 0.45915 1.00000
  Si10 Si 0.50000 0.17883 0.54085 1.00000
  Si11 Si 0.50000 0.32117 0.04085 1.00000
  Si12 Si 0.50000 0.67883 0.95915 1.00000
  Si13 Si 0.50000 0.94468 0.32025 1.00000
  Si14 Si 0.50000 0.05532 0.67975 1.00000
  Si15 Si 0.50000 0.44468 0.17975 1.00000
  Si16 Si 0.50000 0.55532 0.82025 1.00000
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