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Nb4GaGe

Alexandria ALEX

Alex-ID: agm005877151 · 空间群: P4/mcc (#124)

Alexandria Database API

基础信息

化学式
Nb4GaGe
Alex-ID
agm005877151
元素数
3
位点数
12
空间群
P4/mcc (#124)
晶系
tetragonal
体积
207.67
ų
晶胞参数 a
5.3041
Å
晶胞参数 b
6.2572
Å
晶胞参数 c
6.2572
Å
α 角
90.00
°
β 角
90.00
°
γ 角
90.00
°

组成

元素组成（原子分数）
组成信息
化学式
Nb4GaGe
Nb
8.00 · 66.7%
Ga
2.00 · 16.7%
Ge
2.00 · 16.7%

能量与稳定性

凸包上方能量
0.0497
eV/atom
形成能
-0.3422
eV/atom
校正后总能量
-99.9580
eV
原始总能量
-99.9580
eV

电子结构

间接带隙
0.0000
eV
直接带隙
0.0000
eV
费米能级态密度
6.8739
总磁矩
0.0000
μB

其他信息

原型 ID

ABC4_150_spg124

分解产物

Nb5Ga Nb5Ga2Ge Nb2Ge

计算时间

2023-07-28 09:12:26.191905

引用参考

Alexandria 官方页面
https://alexandria.icams.rub.de/
参考引用

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm005877151).

文献引用

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX 
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

晶体结构 3D 渲染

加载 3D 结构...

样式: Ball & Stick
原始 CIF 数据 
# CIF generated by HEAS from Alexandria entry agm005877151
data_agm005877151
_cell_length_a     5.30412
_cell_length_b     6.25715
_cell_length_c     6.25715
_cell_angle_alpha  90.00000
_cell_angle_beta   90.00000
_cell_angle_gamma  90.00000
_cell_volume       207.66676
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Nb1 Nb 0.00000 0.15501 0.65789 1.00000
  Nb2 Nb 0.00000 0.84499 0.34211 1.00000
  Nb3 Nb 0.00000 0.34211 0.15501 1.00000
  Nb4 Nb 0.00000 0.65789 0.84499 1.00000
  Nb5 Nb 0.50000 0.84499 0.65789 1.00000
  Nb6 Nb 0.50000 0.15501 0.34211 1.00000
  Nb7 Nb 0.50000 0.65789 0.15501 1.00000
  Nb8 Nb 0.50000 0.34211 0.84499 1.00000
  Ga1 Ga 0.25000 0.50000 0.50000 1.00000
  Ga2 Ga 0.75000 0.50000 0.50000 1.00000
  Ge1 Ge 0.25000 0.00000 0.00000 1.00000
  Ge2 Ge 0.75000 0.00000 0.00000 1.00000
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