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HEAS Data Platform · Materials Science Database

U(GaNi4)3

Alexandria ALEX

Alex-ID: agm005896089 · Space group: P4/mmm (#123)

Alexandria Database API

Basic Information

Formula
U(GaNi4)3
Alex-ID
agm005896089
Elements
3
Sites
16
Space group
P4/mmm (#123)
Crystal system
tetragonal
Volume
193.46
ų
Cell a
3.6874
Å
Cell b
3.6874
Å
Cell c
14.2286
Å
α angle
90.00
°
β angle
90.00
°
γ angle
90.00
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
U(GaNi4)3
U
1.00 · 6.3%
Ga
3.00 · 18.8%
Ni
12.00 · 75.0%

Energy & Stability

Energy above hull
0.0154
eV/atom
Formation energy
-0.2837
eV/atom
Corrected total energy
-94.3216
eV
Raw total energy
-94.3216
eV

Electronic Structure

Indirect band gap
0.0000
eV
Direct band gap
0.0000
eV
DOS at Fermi level
10.5292
Total magnetisation
-0.6233
μB

Additional Information

Prototype ID

AB3C12_5_spg123

Decomposition

GaNi3 GaNi2 UNi5

Computed at

2023-07-23 15:00:15.326409

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm005896089).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX 
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data 
# CIF generated by HEAS from Alexandria entry agm005896089
data_agm005896089
_cell_length_a     3.68739
_cell_length_b     3.68739
_cell_length_c     14.22858
_cell_angle_alpha  90.00000
_cell_angle_beta   90.00000
_cell_angle_gamma  90.00000
_cell_volume       193.46397
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  U1 U 0.00000 0.00000 0.00000 1.00000
  Ga1 Ga 0.00000 0.00000 0.26132 1.00000
  Ga2 Ga 0.00000 0.00000 0.50000 1.00000
  Ga3 Ga 0.00000 0.00000 0.73868 1.00000
  Ni1 Ni 0.50000 0.50000 0.00000 1.00000
  Ni2 Ni 0.50000 0.50000 0.25612 1.00000
  Ni3 Ni 0.50000 0.50000 0.50000 1.00000
  Ni4 Ni 0.50000 0.50000 0.74388 1.00000
  Ni5 Ni 0.50000 0.00000 0.13097 1.00000
  Ni6 Ni 0.50000 0.00000 0.37929 1.00000
  Ni7 Ni 0.50000 0.00000 0.62071 1.00000
  Ni8 Ni 0.50000 0.00000 0.86903 1.00000
  Ni9 Ni 0.00000 0.50000 0.13097 1.00000
  Ni10 Ni 0.00000 0.50000 0.37929 1.00000
  Ni11 Ni 0.00000 0.50000 0.62071 1.00000
  Ni12 Ni 0.00000 0.50000 0.86903 1.00000
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