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DyGa9Rh2

Alexandria ALEX

Alex-ID: agm005919084 · Space group: I4_1/amd (#141)

Basic Information

Formula
DyGa9Rh2
Alex-ID
agm005919084
Elements
3
Sites
24
Space group
I4_1/amd (#141)
Crystal system
tetragonal
Volume
413.85
ų
Cell a
6.6406
Å
Cell b
8.5197
Å
Cell c
8.6089
Å
α angle
81.36
°
β angle
67.31
°
γ angle
67.06
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
DyGa9Rh2
Dy
2.00 · 8.3%
Ga
18.00 · 75.0%
Rh
4.00 · 16.7%

Energy & Stability

Energy above hull
0.1519
eV/atom
Formation energy
-0.3500
eV/atom
Corrected total energy
-101.5410
eV
Raw total energy
-101.5410
eV

Electronic Structure

Indirect band gap
0.0000
eV
Direct band gap
0.1068
eV
DOS at Fermi level
10.0000
Total magnetisation
0.0000
μB

Additional Information

Prototype ID

AB2C9_2_spg141

Decomposition

Dy4Ga16Rh3 Dy2(Ga3Rh)3 Ga5Rh

Computed at

2023-07-24 08:48:48.770494

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm005919084).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data
# CIF generated by HEAS from Alexandria entry agm005919084
data_agm005919084
_cell_length_a     6.64065
_cell_length_b     8.51972
_cell_length_c     8.60893
_cell_angle_alpha  81.35518
_cell_angle_beta   67.31380
_cell_angle_gamma  67.06284
_cell_volume       413.84784
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Dy1 Dy 0.50000 1.00000 1.00000 1.00000
  Dy2 Dy 0.25000 0.50000 0.50000 1.00000
  Ga1 Ga 0.75000 0.50000 0.50001 1.00000
  Ga2 Ga 0.00000 1.00000 0.99999 1.00000
  Ga3 Ga 0.98464 0.92764 0.69273 1.00000
  Ga4 Ga 0.60500 0.07236 0.30727 1.00000
  Ga5 Ga 0.66628 0.19072 0.56892 1.00000
  Ga6 Ga 0.42592 0.80928 0.43108 1.00000
  Ga7 Ga 0.76480 0.80928 0.56892 1.00000
  Ga8 Ga 0.14300 0.19072 0.43108 1.00000
  Ga9 Ga 0.08772 0.92764 0.30727 1.00000
  Ga10 Ga 0.32264 0.07236 0.69273 1.00000
  Ga11 Ga 0.76536 0.57236 0.80727 1.00000
  Ga12 Ga 0.14500 0.42764 0.19273 1.00000
  Ga13 Ga 0.08372 0.30928 0.93108 1.00000
  Ga14 Ga 0.32408 0.69072 0.06892 1.00000
  Ga15 Ga 0.98520 0.69072 0.93108 1.00000
  Ga16 Ga 0.60700 0.30928 0.06892 1.00000
  Ga17 Ga 0.66228 0.57236 0.19273 1.00000
  Ga18 Ga 0.42736 0.42764 0.80727 1.00000
  Rh1 Rh 0.87500 0.25000 0.75000 1.00000
  Rh2 Rh 0.87500 0.75000 0.25000 1.00000
  Rh3 Rh 0.87500 0.25000 0.25000 1.00000
  Rh4 Rh 0.37500 0.75000 0.75000 1.00000
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