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Cs3SiH8

Alexandria ALEX

Alex-ID: agm005964526 · Space group: P6_3mc (#186)

Basic Information

Formula
Cs3SiH8
Alex-ID
agm005964526
Elements
3
Sites
24
Space group
P6_3mc (#186)
Crystal system
hexagonal
Volume
417.96
ų
Cell a
7.2381
Å
Cell b
8.1657
Å
Cell c
8.1657
Å
α angle
120.00
°
β angle
90.00
°
γ angle
90.00
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
Cs3SiH8
Cs
6.00 · 25.0%
Si
2.00 · 8.3%
H
16.00 · 66.7%

Energy & Stability

Energy above hull
0.2165
eV/atom
Formation energy
-0.0425
eV/atom
Corrected total energy
-68.8398
eV
Raw total energy
-68.8398
eV

Electronic Structure

Indirect band gap
1.2631
eV
Direct band gap
1.2631
eV
DOS at Fermi level
-0.0019
Total magnetisation
2.0500
μB

Additional Information

Prototype ID

AB3C8_225_spg186

Decomposition

CsH2 Cs2SiH6

Computed at

2023-07-10 11:51:32.848525

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm005964526).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data
# CIF generated by HEAS from Alexandria entry agm005964526
data_agm005964526
_cell_length_a     7.23813
_cell_length_b     8.16566
_cell_length_c     8.16566
_cell_angle_alpha  119.99999
_cell_angle_beta   90.00000
_cell_angle_gamma  90.00000
_cell_volume       417.96484
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Cs1 Cs 0.72298 0.66302 0.83151 1.00000
  Cs2 Cs 0.72298 0.16849 0.33698 1.00000
  Cs3 Cs 0.72298 0.16849 0.83151 1.00000
  Cs4 Cs 0.22298 0.33698 0.16849 1.00000
  Cs5 Cs 0.22298 0.83151 0.66302 1.00000
  Cs6 Cs 0.22298 0.83151 0.16849 1.00000
  Si1 Si 0.16440 0.33333 0.66667 1.00000
  Si2 Si 0.66440 0.66667 0.33333 1.00000
  H1 H 0.03611 0.14422 0.57211 1.00000
  H2 H 0.03611 0.42789 0.85578 1.00000
  H3 H 0.03611 0.42789 0.57211 1.00000
  H4 H 0.53611 0.85578 0.42789 1.00000
  H5 H 0.53611 0.57211 0.14422 1.00000
  H6 H 0.53611 0.57211 0.42789 1.00000
  H7 H 0.79410 0.47945 0.23973 1.00000
  H8 H 0.79410 0.76027 0.52055 1.00000
  H9 H 0.79410 0.76027 0.23973 1.00000
  H10 H 0.29410 0.52055 0.76027 1.00000
  H11 H 0.29410 0.23973 0.47945 1.00000
  H12 H 0.29410 0.23973 0.76027 1.00000
  H13 H 0.47740 0.33333 0.66667 1.00000
  H14 H 0.97740 0.66667 0.33333 1.00000
  H15 H 0.97163 0.00000 0.00000 1.00000
  H16 H 0.47163 0.00000 0.00000 1.00000
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