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MgSi7Os3

Alexandria ALEX

Alex-ID: agm005989340 · Space group: R-3c (#167)

Alexandria Database API

Basic Information

Formula
MgSi7Os3
Alex-ID
agm005989340
Elements
3
Sites
22
Space group
R-3c (#167)
Crystal system
trigonal
Volume
331.67
ų
Cell a
7.6846
Å
Cell b
7.6846
Å
Cell c
7.8578
Å
α angle
60.73
°
β angle
60.73
°
γ angle
60.00
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
MgSi7Os3
Mg
2.00 · 9.1%
Si
14.00 · 63.6%
Os
6.00 · 27.3%

Energy & Stability

Energy above hull
0.1528
eV/atom
Formation energy
-0.2364
eV/atom
Corrected total energy
-151.6910
eV
Raw total energy
-151.6910
eV

Electronic Structure

Indirect band gap
0.0000
eV
Direct band gap
0.0000
eV
DOS at Fermi level
8.2370
Total magnetisation
0.0000
μB

Additional Information

Prototype ID

AB3C7_46_spg167

Decomposition

Si2Os Mg2Si Si

Computed at

2023-08-12 02:37:33.484908

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm005989340).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX 
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data 
# CIF generated by HEAS from Alexandria entry agm005989340
data_agm005989340
_cell_length_a     7.68460
_cell_length_b     7.68460
_cell_length_c     7.85780
_cell_angle_alpha  60.72650
_cell_angle_beta   60.72650
_cell_angle_gamma  60.00000
_cell_volume       331.67420
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Mg1 Mg 0.50000 0.50000 0.50000 1.00000
  Mg2 Mg 0.00000 0.00000 0.00000 1.00000
  Si1 Si 0.67205 0.05893 0.40990 1.00000
  Si2 Si 0.05893 0.85912 0.40990 1.00000
  Si3 Si 0.85912 0.67205 0.40990 1.00000
  Si4 Si 0.82795 0.64088 0.09010 1.00000
  Si5 Si 0.44107 0.82795 0.09010 1.00000
  Si6 Si 0.64088 0.44107 0.09010 1.00000
  Si7 Si 0.32795 0.94107 0.59010 1.00000
  Si8 Si 0.94107 0.14088 0.59010 1.00000
  Si9 Si 0.14088 0.32795 0.59010 1.00000
  Si10 Si 0.17205 0.35912 0.90990 1.00000
  Si11 Si 0.55893 0.17205 0.90990 1.00000
  Si12 Si 0.35912 0.55893 0.90990 1.00000
  Si13 Si 0.75000 0.75000 0.75000 1.00000
  Si14 Si 0.25000 0.25000 0.25000 1.00000
  Os1 Os 0.41791 0.08209 0.75000 1.00000
  Os2 Os 0.08209 0.75000 0.75000 1.00000
  Os3 Os 0.75000 0.41791 0.75000 1.00000
  Os4 Os 0.58209 0.91791 0.25000 1.00000
  Os5 Os 0.91791 0.25000 0.25000 1.00000
  Os6 Os 0.25000 0.58209 0.25000 1.00000
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