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Th4SiAs3

Alexandria ALEX

Alex-ID: agm006010633 · Space group: P2/c (#13)

Alexandria Database API

Basic Information

Formula
Th4SiAs3
Alex-ID
agm006010633
Elements
3
Sites
16
Space group
P2/c (#13)
Crystal system
monoclinic
Volume
436.87
ų
Cell a
7.3822
Å
Cell b
7.3820
Å
Cell c
8.4931
Å
α angle
90.00
°
β angle
90.00
°
γ angle
109.28
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
Th4SiAs3
Si
2.00 · 12.5%
As
6.00 · 37.5%
Th
8.00 · 50.0%

Energy & Stability

Energy above hull
0.0042
eV/atom
Formation energy
-1.2271
eV/atom
Corrected total energy
-117.7566
eV
Raw total energy
-117.7566
eV

Electronic Structure

Indirect band gap
0.0000
eV
Direct band gap
0.0000
eV
DOS at Fermi level
6.8334
Total magnetisation
0.0000
μB

Additional Information

Prototype ID

AB3C4_1412_spg13

Decomposition

Th4SiAs3

Computed at

2023-10-05 15:35:07.541376

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm006010633).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX 
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data 
# CIF generated by HEAS from Alexandria entry agm006010633
data_agm006010633
_cell_length_a     7.38218
_cell_length_b     7.38201
_cell_length_c     8.49312
_cell_angle_alpha  90.00000
_cell_angle_beta   90.00000
_cell_angle_gamma  109.28399
_cell_volume       436.86697
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Si1 Si 0.75000 0.00000 0.87433 1.00000
  Si2 Si 0.25000 0.00000 0.12567 1.00000
  As1 As 0.75000 0.00000 0.37558 1.00000
  As2 As 0.25000 0.00000 0.62442 1.00000
  As3 As 0.75000 0.50000 0.62406 1.00000
  As4 As 0.75000 0.50000 0.12598 1.00000
  As5 As 0.25000 0.50000 0.37594 1.00000
  As6 As 0.25000 0.50000 0.87402 1.00000
  Th1 Th 0.99646 0.24737 0.62819 1.00000
  Th2 Th 0.50048 0.24437 0.87791 1.00000
  Th3 Th 0.49646 0.24737 0.37181 1.00000
  Th4 Th 0.00048 0.24437 0.12209 1.00000
  Th5 Th 0.99952 0.75563 0.87791 1.00000
  Th6 Th 0.50354 0.75263 0.62819 1.00000
  Th7 Th 0.49952 0.75563 0.12209 1.00000
  Th8 Th 0.00354 0.75263 0.37181 1.00000
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