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Nd4Ga12Sn

Alexandria ALEX

Alex-ID: agm006015045 · Space group: Im-3m (#229)

Basic Information

Formula
Nd4Ga12Sn
Alex-ID
agm006015045
Elements
3
Sites
17
Space group
Im-3m (#229)
Crystal system
cubic
Volume
364.30
ų
Cell a
7.7928
Å
Cell b
7.7928
Å
Cell c
7.7928
Å
α angle
109.47
°
β angle
109.47
°
γ angle
109.47
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
Nd4Ga12Sn
Nd
4.00 · 23.5%
Ga
12.00 · 70.6%
Sn
1.00 · 5.9%

Energy & Stability

Energy above hull
0.0440
eV/atom
Formation energy
-0.4965
eV/atom
Corrected total energy
-67.8850
eV
Raw total energy
-67.8850
eV

Electronic Structure

Indirect band gap
0.0000
eV
Direct band gap
0.0000
eV
DOS at Fermi level
10.5486
Total magnetisation
0.0000
μB

Additional Information

Prototype ID

AB4C12_32_spg229

Decomposition

NdGa3 Sn

Computed at

2023-08-07 16:14:11.661713

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm006015045).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data
# CIF generated by HEAS from Alexandria entry agm006015045
data_agm006015045
_cell_length_a     7.79281
_cell_length_b     7.79281
_cell_length_c     7.79281
_cell_angle_alpha  109.47122
_cell_angle_beta   109.47122
_cell_angle_gamma  109.47122
_cell_volume       364.30058
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Nd1 Nd 0.00000 0.00000 0.50000 1.00000
  Nd2 Nd 0.50000 0.00000 0.00000 1.00000
  Nd3 Nd 0.50000 0.50000 0.50000 1.00000
  Nd4 Nd 0.00000 0.50000 0.00000 1.00000
  Ga1 Ga 0.00000 0.32220 0.32220 1.00000
  Ga2 Ga 1.00000 0.67780 0.67780 1.00000
  Ga3 Ga 0.67780 0.67780 1.00000 1.00000
  Ga4 Ga 0.32220 0.32220 0.00000 1.00000
  Ga5 Ga 0.32220 0.00000 0.32220 1.00000
  Ga6 Ga 0.67780 1.00000 0.67780 1.00000
  Ga7 Ga 0.50000 0.25000 0.75000 1.00000
  Ga8 Ga 0.50000 0.75000 0.25000 1.00000
  Ga9 Ga 0.75000 0.25000 0.50000 1.00000
  Ga10 Ga 0.25000 0.75000 0.50000 1.00000
  Ga11 Ga 0.75000 0.50000 0.25000 1.00000
  Ga12 Ga 0.25000 0.50000 0.75000 1.00000
  Sn1 Sn 0.00000 0.00000 0.00000 1.00000
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