GaH7Os2
Alexandria ALEXAlex-ID: agm006201050 · 空间群: P2/m (#10)
基础信息
组成
能量与稳定性
电子结构
其他信息
AB2C7_804_spg12
Os H2 Ga3Os
2023-11-18 19:05:31
引用参考
The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm006201050).
Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620
@article{Cavignac2026Alexandria,
author = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
and Marques, Miguel A. L.},
title = {{AI}-Driven expansion and application of the {A}lexandria database},
journal = {Journal of Physics: Materials},
year = {2026},
volume = {9},
number = {2},
pages = {025014},
doi = {10.1088/2515-7639/ae6620},
url = {https://doi.org/10.1088/2515-7639/ae6620}
}
晶体结构 3D 渲染
加载 3D 结构...
# CIF generated by HEAS from Alexandria entry agm006201050
data_agm006201050
_cell_length_a 2.87839
_cell_length_b 4.68978
_cell_length_c 8.81927
_cell_angle_alpha 118.70320
_cell_angle_beta 70.92866
_cell_angle_gamma 127.99559
_cell_volume 82.20755
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
H1 H 0.20976 0.91670 0.32355 1.00000
H2 H 0.73675 0.79475 0.67007 1.00000
H3 H 0.22783 0.25810 0.64497 1.00000
H4 H 0.96018 0.08166 0.23558 1.00000
H5 H 0.47335 0.85593 0.49681 1.00000
H6 H 0.71864 0.45340 0.34872 1.00000
H7 H 0.98616 0.62962 0.75798 1.00000
Os1 Os 0.48311 0.09530 0.72658 1.00000
Os2 Os 0.46327 0.61614 0.26707 1.00000
Ga1 Ga 0.97335 0.35580 0.99684 1.00000
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