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Sc3Re2Si3

Alexandria ALEX

Alex-ID: agm006217876 · Space group: C2 (#5)

Basic Information

Formula
Sc3Re2Si3
Alex-ID
agm006217876
Elements
3
Sites
32
Space group
C2 (#5)
Crystal system
monoclinic
Volume
556.31
ų
Cell a
10.0858
Å
Cell b
10.0858
Å
Cell c
13.7676
Å
α angle
53.24
°
β angle
53.24
°
γ angle
30.42
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
Sc3Re2Si3
Sc
12.00 · 37.5%
Re
8.00 · 25.0%
Si
12.00 · 37.5%

Energy & Stability

Energy above hull
0.1585
eV/atom
Formation energy
-0.5466
eV/atom
Corrected total energy
-258.1308
eV
Raw total energy
-258.1308
eV

Electronic Structure

Indirect band gap
0.0000
eV
Direct band gap
0.0261
eV
DOS at Fermi level
19.9612
Total magnetisation
0.0000
μB

Additional Information

Prototype ID

A2B3C3_109_spg5

Decomposition

ScReSi Sc2ReSi2

Computed at

2023-12-14 03:35:48.262855

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm006217876).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data
# CIF generated by HEAS from Alexandria entry agm006217876
data_agm006217876
_cell_length_a     10.08583
_cell_length_b     10.08583
_cell_length_c     13.76762
_cell_angle_alpha  53.23682
_cell_angle_beta   53.23682
_cell_angle_gamma  30.42394
_cell_volume       556.30701
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Sc1 Sc 0.36003 0.88440 0.79029 1.00000
  Sc2 Sc 0.65050 0.67785 0.38757 1.00000
  Sc3 Sc 0.11560 0.63997 0.20971 1.00000
  Sc4 Sc 0.90665 0.95734 0.38785 1.00000
  Sc5 Sc 0.12215 0.69529 0.91863 1.00000
  Sc6 Sc 0.32215 0.34950 0.61243 1.00000
  Sc7 Sc 0.15709 0.12229 0.26005 1.00000
  Sc8 Sc 0.88400 0.43689 0.88967 1.00000
  Sc9 Sc 0.87771 0.84291 0.73995 1.00000
  Sc10 Sc 0.30471 0.87785 0.08137 1.00000
  Sc11 Sc 0.56311 0.11600 0.11033 1.00000
  Sc12 Sc 0.04266 0.09335 0.61215 1.00000
  Re1 Re 0.51933 0.55748 0.31899 1.00000
  Re2 Re 0.44252 0.48067 0.68101 1.00000
  Re3 Re 0.68765 0.27189 0.16466 1.00000
  Re4 Re 0.66573 0.81393 0.04354 1.00000
  Re5 Re 0.42554 0.04747 0.53329 1.00000
  Re6 Re 0.72811 0.31235 0.83534 1.00000
  Re7 Re 0.95253 0.57446 0.46671 1.00000
  Re8 Re 0.18607 0.33427 0.95646 1.00000
  Si1 Si 0.46845 0.53155 0.00000 1.00000
  Si2 Si 0.98903 0.35689 0.68152 1.00000
  Si3 Si 0.97304 0.02696 0.00000 1.00000
  Si4 Si 0.21046 0.22959 0.36971 1.00000
  Si5 Si 0.60470 0.15663 0.87790 1.00000
  Si6 Si 0.84337 0.39530 0.12210 1.00000
  Si7 Si 0.77041 0.78954 0.63029 1.00000
  Si8 Si 0.58123 0.63070 0.63186 1.00000
  Si9 Si 0.73383 0.26617 0.50000 1.00000
  Si10 Si 0.23304 0.76696 0.50000 1.00000
  Si11 Si 0.36930 0.41877 0.36814 1.00000
  Si12 Si 0.64311 0.01097 0.31848 1.00000
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