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Si3N4

Alexandria ALEX

Alex-ID: agm006224924 · 空间群: P6_3/m (#176)

基础信息

化学式
Si3N4
Alex-ID
agm006224924
元素数
2
位点数
42
空间群
P6_3/m (#176)
晶系
hexagonal
体积
498.31
ų
晶胞参数 a
8.3092
Å
晶胞参数 b
8.3092
Å
晶胞参数 c
8.3341
Å
α 角
90.00
°
β 角
90.00
°
γ 角
120.00
°

组成

元素组成(原子分数)
组成信息
化学式
Si3N4
Si
18.00 · 42.9%
N
24.00 · 57.1%

能量与稳定性

凸包上方能量
0.2309
eV/atom
形成能
-1.0822
eV/atom
校正后总能量
-333.9262
eV
原始总能量
-333.9262
eV

电子结构

间接带隙
2.8665
eV
直接带隙
2.8665
eV
费米能级态密度
0.0000
总磁矩
0.0000
μB

其他信息

原型 ID

A3B4_2267_spg176

分解产物

Si3N4

计算时间

2024-10-31 21:54:20

引用参考

Alexandria 官方页面
https://alexandria.icams.rub.de/
参考引用

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm006224924).

文献引用

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

晶体结构 3D 渲染

加载 3D 结构...

样式: Ball & Stick
原始 CIF 数据
# CIF generated by HEAS from Alexandria entry agm006224924
data_agm006224924
_cell_length_a     8.30916
_cell_length_b     8.30916
_cell_length_c     8.33406
_cell_angle_alpha  90.00000
_cell_angle_beta   90.00000
_cell_angle_gamma  120.00000
_cell_volume       498.31197
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Si1 Si 0.03255 0.32654 0.10287 1.00000
  Si2 Si 0.35699 0.31010 0.25000 1.00000
  Si3 Si 0.04689 0.35699 0.75000 1.00000
  Si4 Si 0.95311 0.64301 0.25000 1.00000
  Si5 Si 0.70600 0.03255 0.60287 1.00000
  Si6 Si 0.64301 0.68990 0.75000 1.00000
  Si7 Si 0.70600 0.03255 0.89713 1.00000
  Si8 Si 0.31010 0.95311 0.75000 1.00000
  Si9 Si 0.67346 0.70600 0.39713 1.00000
  Si10 Si 0.32654 0.29400 0.89713 1.00000
  Si11 Si 0.03255 0.32654 0.39713 1.00000
  Si12 Si 0.67346 0.70600 0.10287 1.00000
  Si13 Si 0.96745 0.67346 0.89713 1.00000
  Si14 Si 0.68990 0.04689 0.25000 1.00000
  Si15 Si 0.29400 0.96745 0.10287 1.00000
  Si16 Si 0.96745 0.67346 0.60287 1.00000
  Si17 Si 0.29400 0.96745 0.39713 1.00000
  Si18 Si 0.32654 0.29400 0.60287 1.00000
  N1 N 0.45687 0.97686 0.25000 1.00000
  N2 N 0.25242 0.12523 0.75000 1.00000
  N3 N 0.16519 0.37271 0.56942 1.00000
  N4 N 0.54313 0.02314 0.75000 1.00000
  N5 N 0.51999 0.54313 0.25000 1.00000
  N6 N 0.37271 0.20751 0.43058 1.00000
  N7 N 0.37271 0.20751 0.06942 1.00000
  N8 N 0.12523 0.87281 0.25000 1.00000
  N9 N 0.74758 0.87477 0.25000 1.00000
  N10 N 0.87477 0.12719 0.75000 1.00000
  N11 N 0.20751 0.83481 0.56942 1.00000
  N12 N 0.48001 0.45687 0.75000 1.00000
  N13 N 0.83481 0.62729 0.06942 1.00000
  N14 N 0.02314 0.48001 0.25000 1.00000
  N15 N 0.79249 0.16519 0.06942 1.00000
  N16 N 0.16519 0.37271 0.93058 1.00000
  N17 N 0.62729 0.79249 0.56942 1.00000
  N18 N 0.62729 0.79249 0.93058 1.00000
  N19 N 0.20751 0.83481 0.93058 1.00000
  N20 N 0.83481 0.62729 0.43058 1.00000
  N21 N 0.79249 0.16519 0.43058 1.00000
  N22 N 0.97686 0.51999 0.75000 1.00000
  N23 N 0.87281 0.74758 0.75000 1.00000
  N24 N 0.12719 0.25242 0.25000 1.00000
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