CsGaCo3Si3(HO6)2

Alexandria ALEX

Alex-ID: agm006254591 · 空间群: P1 (#1)

Alexandria Database API

基础信息

化学式

CsGaCo3Si3(HO6)2

Alex-ID

agm006254591

元素数

位点数

空间群

P1 (#1)

晶系

triclinic

体积

283.97

Å³

晶胞参数 a

5.3639

晶胞参数 b

5.3809

晶胞参数 c

11.4786

α 角

99.07

β 角

85.93

γ 角

119.77

组成

元素组成（原子分数）

组成信息

化学式

CsGaCo3Si3(HO6)2

1.00 · 4.5%

3.00 · 13.6%

2.00 · 9.1%

12.00 · 54.5%

能量与稳定性

凸包上方能量

0.0260

eV/atom

形成能

-2.2970

eV/atom

校正后总能量

-158.0370

原始总能量

-143.9875

电子结构

间接带隙

2.2183

直接带隙

2.2674

费米能级态密度

0.0000

总磁矩

6.9704

μB

其他信息

原型 ID

ABC2D3E3F12_0_spg1

分解产物

Co2SiO4 Cs2Ga2Si3O10 H2O

计算时间

2024-02-20 19:17:01

引用参考

Alexandria 官方页面

https://alexandria.icams.rub.de/

参考引用

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm006254591).

文献引用

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX

@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

晶体结构 3D 渲染

加载 3D 结构...

样式: Ball & Stick | 拖拽旋转 · 滚轮缩放 · 右键平移

原始 CIF 数据

# CIF generated by HEAS from Alexandria entry agm006254591
data_agm006254591
_cell_length_a     5.36393
_cell_length_b     5.38091
_cell_length_c     11.47861
_cell_angle_alpha  99.06798
_cell_angle_beta   85.92656
_cell_angle_gamma  119.77260
_cell_volume       283.96955
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Cs1 Cs 0.00017 0.50300 0.01397 1.00000
  Ga1 Ga 0.66706 0.91479 0.25180 1.00000
  Co1 Co 0.33571 0.66685 0.49713 1.00000
  Co2 Co 0.66741 0.33223 0.49650 1.00000
  Co3 Co 0.00299 0.00244 0.49701 1.00000
  Si1 Si 0.33833 0.24712 0.24745 1.00000
  Si2 Si 0.33077 0.08109 0.74742 1.00000
  Si3 Si 0.66474 0.74466 0.74678 1.00000
  H1 H 0.99996 0.61784 0.32246 1.00000
  H2 H 0.99242 0.40180 0.67479 1.00000
  O1 O 0.00293 0.64336 0.40833 1.00000
  O2 O 0.99636 0.36809 0.58924 1.00000
  O3 O 0.66272 0.97228 0.41357 1.00000
  O4 O 0.34724 0.29863 0.39511 1.00000
  O5 O 0.32615 0.03539 0.60588 1.00000
  O6 O 0.66252 0.69212 0.60455 1.00000
  O7 O 0.02431 0.98168 0.19675 1.00000
  O8 O 0.99855 0.93027 0.80226 1.00000
  O9 O 0.58176 0.16263 0.19151 1.00000
  O10 O 0.39893 0.53870 0.19451 1.00000
  O11 O 0.50051 0.93259 0.80033 1.00000
  O12 O 0.49841 0.43244 0.80263 1.00000

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