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InSn2Se2Cl3

Alexandria ALEX

Alex-ID: agm007055596 · Space group: P2_1/c (#14)

Basic Information

Formula
InSn2Se2Cl3
Alex-ID
agm007055596
Elements
4
Sites
32
Space group
P2_1/c (#14)
Crystal system
monoclinic
Volume
919.62
ų
Cell a
6.6124
Å
Cell b
17.5116
Å
Cell c
8.3950
Å
α angle
90.00
°
β angle
108.91
°
γ angle
90.00
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
InSn2Se2Cl3
Cl
12.00 · 37.5%
Sn
8.00 · 25.0%
Se
8.00 · 25.0%
In
4.00 · 12.5%

Energy & Stability

Energy above hull
0.0794
eV/atom
Formation energy
-0.9271
eV/atom
Corrected total energy
-115.7400
eV
Raw total energy
-115.7400
eV

Electronic Structure

Indirect band gap
1.3574
eV
Direct band gap
1.3887
eV
DOS at Fermi level
-0.0020
Total magnetisation
0.0000
μB

Additional Information

Prototype ID

AB2C2D3_45_spg14

Decomposition

SnCl2 SnSe In2Se3

Computed at

2023-12-27 00:39:11.941850

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm007055596).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data
# CIF generated by HEAS from Alexandria entry agm007055596
data_agm007055596
_cell_length_a     6.61240
_cell_length_b     17.51160
_cell_length_c     8.39497
_cell_angle_alpha  90.00000
_cell_angle_beta   108.91044
_cell_angle_gamma  90.00000
_cell_volume       919.61796
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Cl1 Cl 0.16262 0.62157 0.56765 1.00000
  Cl2 Cl 0.83738 0.37843 0.43235 1.00000
  Cl3 Cl 0.83738 0.12157 0.93235 1.00000
  Cl4 Cl 0.16262 0.87843 0.06765 1.00000
  Cl5 Cl 0.18584 0.62569 0.00865 1.00000
  Cl6 Cl 0.81416 0.37431 0.99135 1.00000
  Cl7 Cl 0.81416 0.12569 0.49135 1.00000
  Cl8 Cl 0.18584 0.87431 0.50865 1.00000
  Cl9 Cl 0.26737 0.24810 0.31124 1.00000
  Cl10 Cl 0.73263 0.75190 0.68876 1.00000
  Cl11 Cl 0.73263 0.74810 0.18876 1.00000
  Cl12 Cl 0.26737 0.25190 0.81124 1.00000
  Sn1 Sn 0.22844 0.50986 0.32298 1.00000
  Sn2 Sn 0.77156 0.49014 0.67702 1.00000
  Sn3 Sn 0.77156 0.00986 0.17702 1.00000
  Sn4 Sn 0.22844 0.99014 0.82298 1.00000
  Sn5 Sn 0.46585 0.72581 0.88590 1.00000
  Sn6 Sn 0.53415 0.27419 0.11410 1.00000
  Sn7 Sn 0.53415 0.22581 0.61410 1.00000
  Sn8 Sn 0.46585 0.77419 0.38590 1.00000
  Se1 Se 0.34524 0.07811 0.58723 1.00000
  Se2 Se 0.65476 0.92189 0.41277 1.00000
  Se3 Se 0.65476 0.57811 0.91277 1.00000
  Se4 Se 0.34524 0.42189 0.08723 1.00000
  Se5 Se 0.39182 0.08149 0.09897 1.00000
  Se6 Se 0.60818 0.91851 0.90103 1.00000
  Se7 Se 0.60818 0.58149 0.40103 1.00000
  Se8 Se 0.39182 0.41851 0.59897 1.00000
  In1 In 0.25898 0.51586 0.80784 1.00000
  In2 In 0.74102 0.48414 0.19216 1.00000
  In3 In 0.74102 0.01586 0.69216 1.00000
  In4 In 0.25898 0.98414 0.30784 1.00000
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