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ScGa(H4Rh)2

Alexandria ALEX

Alex-ID: agm007448166 · 空间群: P-1 (#2)

基础信息

化学式
ScGa(H4Rh)2
Alex-ID
agm007448166
元素数
4
位点数
12
空间群
P-1 (#2)
晶系
triclinic
体积
94.47
ų
晶胞参数 a
4.2079
Å
晶胞参数 b
4.3502
Å
晶胞参数 c
6.2376
Å
α 角
67.67
°
β 角
71.50
°
γ 角
65.67
°

组成

元素组成(原子分数)
组成信息
化学式
ScGa(H4Rh)2
Sc
1.00 · 8.3%
Ga
1.00 · 8.3%
H
8.00 · 66.7%
Rh
2.00 · 16.7%

能量与稳定性

凸包上方能量
0.1847
eV/atom
形成能
-0.2138
eV/atom
校正后总能量
-52.5467
eV
原始总能量
-52.5467
eV

电子结构

间接带隙
0.0000
eV
直接带隙
0.2130
eV
费米能级态密度
2.1945
总磁矩
0.0000
μB

其他信息

原型 ID

ABC2D8_204_spg12

分解产物

ScH6Rh H2 GaRh

计算时间

2025-05-27 08:42:17

引用参考

Alexandria 官方页面
https://alexandria.icams.rub.de/
参考引用

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm007448166).

文献引用

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

晶体结构 3D 渲染

加载 3D 结构...

样式: Ball & Stick
原始 CIF 数据
# CIF generated by HEAS from Alexandria entry agm007448166
data_agm007448166
_cell_length_a     4.20787
_cell_length_b     4.35024
_cell_length_c     6.23761
_cell_angle_alpha  67.66758
_cell_angle_beta   71.50025
_cell_angle_gamma  65.67478
_cell_volume       94.47315
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Sc1 Sc 0.50000 0.50000 0.50000 1.00000
  Ga1 Ga 0.00000 0.00000 0.00000 1.00000
  H1 H 0.94397 0.51649 0.63860 1.00000
  H2 H 0.54436 0.50677 0.14556 1.00000
  H3 H 0.05603 0.48351 0.36140 1.00000
  H4 H 0.45564 0.49323 0.85444 1.00000
  H5 H 0.56202 0.00207 0.33734 1.00000
  H6 H 0.43798 0.99793 0.66266 1.00000
  H7 H 0.05501 0.00651 0.31572 1.00000
  H8 H 0.94499 0.99349 0.68428 1.00000
  Rh1 Rh 0.28615 0.26969 0.15058 1.00000
  Rh2 Rh 0.71385 0.73031 0.84942 1.00000
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