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ZnSi(H4Os)2

Alexandria ALEX

Alex-ID: agm007462729 · 空间群: C2/m (#12)

Alexandria Database API

基础信息

化学式
ZnSi(H4Os)2
Alex-ID
agm007462729
元素数
4
位点数
12
空间群
C2/m (#12)
晶系
monoclinic
体积
98.91
ų
晶胞参数 a
5.1554
Å
晶胞参数 b
5.1554
Å
晶胞参数 c
7.1859
Å
α 角
51.39
°
β 角
51.39
°
γ 角
44.52
°

组成

元素组成（原子分数）
组成信息
化学式
ZnSi(H4Os)2
Zn
1.00 · 8.3%
Si
1.00 · 8.3%
H
8.00 · 66.7%
Os
2.00 · 16.7%

能量与稳定性

凸包上方能量
0.2818
eV/atom
形成能
0.1243
eV/atom
校正后总能量
-53.5869
eV
原始总能量
-53.5869
eV

电子结构

间接带隙
0.0000
eV
直接带隙
0.1944
eV
费米能级态密度
1.4554
总磁矩
0.0000
μB

其他信息

原型 ID

ABC2D8_282_spg2

分解产物

ZnH8Os Si3Os2 Os

计算时间

2024-02-08 17:48:00

引用参考

Alexandria 官方页面
https://alexandria.icams.rub.de/
参考引用

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm007462729).

文献引用

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX 
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

晶体结构 3D 渲染

加载 3D 结构...

样式: Ball & Stick
原始 CIF 数据 
# CIF generated by HEAS from Alexandria entry agm007462729
data_agm007462729
_cell_length_a     5.15541
_cell_length_b     5.15541
_cell_length_c     7.18592
_cell_angle_alpha  51.39492
_cell_angle_beta   51.39492
_cell_angle_gamma  44.52342
_cell_volume       98.90768
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Zn1 Zn 0.00000 0.00000 0.00000 1.00000
  Si1 Si 0.50000 0.50000 0.50000 1.00000
  H1 H 0.96287 0.96287 0.26951 1.00000
  H2 H 0.39080 0.39080 0.95962 1.00000
  H3 H 0.03713 0.03713 0.73049 1.00000
  H4 H 0.60920 0.60920 0.04038 1.00000
  H5 H 0.96645 0.51578 0.68965 1.00000
  H6 H 0.03355 0.48422 0.31035 1.00000
  H7 H 0.51578 0.96645 0.68965 1.00000
  H8 H 0.48422 0.03355 0.31035 1.00000
  Os1 Os 0.83376 0.83376 0.77760 1.00000
  Os2 Os 0.16624 0.16624 0.22240 1.00000
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