导航

HEAS Data Platform · 材料科学计算数据库

ZnGa4

Alexandria ALEX

Alex-ID: agm008070656 · 空间群: R-3m (#166)

基础信息

化学式
ZnGa4
Alex-ID
agm008070656
元素数
2
位点数
5
空间群
R-3m (#166)
晶系
trigonal
体积
89.52
ų
晶胞参数 a
11.7647
Å
晶胞参数 b
11.7647
Å
晶胞参数 c
11.7647
Å
α 角
14.55
°
β 角
14.55
°
γ 角
14.55
°

组成

元素组成(原子分数)
组成信息
化学式
ZnGa4
Zn
1.00 · 20.0%
Ga
4.00 · 80.0%

能量与稳定性

凸包上方能量
0.0134
eV/atom
形成能
0.0074
eV/atom
校正后总能量
-13.3587
eV
原始总能量
-13.3587
eV

电子结构

间接带隙
0.0000
eV
直接带隙
0.0919
eV
费米能级态密度
1.5999
总磁矩
0.0000
μB

其他信息

原型 ID

AB4_1850_spg69

分解产物

Zn2Ga7 Ga

计算时间

2024-05-06 02:43:47.438658

引用参考

Alexandria 官方页面
https://alexandria.icams.rub.de/
参考引用

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm008070656).

文献引用

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

晶体结构 3D 渲染

加载 3D 结构...

样式: Ball & Stick
原始 CIF 数据
# CIF generated by HEAS from Alexandria entry agm008070656
data_agm008070656
_cell_length_a     11.76470
_cell_length_b     11.76470
_cell_length_c     11.76470
_cell_angle_alpha  14.55368
_cell_angle_beta   14.55368
_cell_angle_gamma  14.55368
_cell_volume       89.52452
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Zn1 Zn 0.00000 0.00000 0.00000 1.00000
  Ga1 Ga 0.60289 0.60289 0.60289 1.00000
  Ga2 Ga 0.20005 0.20005 0.20005 1.00000
  Ga3 Ga 0.79995 0.79995 0.79995 1.00000
  Ga4 Ga 0.39711 0.39711 0.39711 1.00000
获取直接链接