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Ho12Si11Sn9

Alexandria ALEX

Alex-ID: agm008239013 · Space group: Amm2 (#38)

Basic Information

Formula
Ho12Si11Sn9
Alex-ID
agm008239013
Elements
3
Sites
32
Space group
Amm2 (#38)
Crystal system
orthorhombic
Volume
720.40
ų
Cell a
6.1157
Å
Cell b
6.1157
Å
Cell c
19.6237
Å
α angle
90.00
°
β angle
90.00
°
γ angle
101.03
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
Ho12Si11Sn9
Ho
12.00 · 37.5%
Si
11.00 · 34.4%
Sn
9.00 · 28.1%

Energy & Stability

Energy above hull
0.1969
eV/atom
Formation energy
-0.4604
eV/atom
Corrected total energy
-165.3535
eV
Raw total energy
-165.3535
eV

Electronic Structure

Indirect band gap
0.0000
eV
Direct band gap
0.0050
eV
DOS at Fermi level
19.8750
Total magnetisation
0.0000
μB

Additional Information

Prototype ID

A9B11C12_1_spg38

Decomposition

HoSi HoSn2 Ho10Si17

Computed at

2024-06-01 16:46:19.244593

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm008239013).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data
# CIF generated by HEAS from Alexandria entry agm008239013
data_agm008239013
_cell_length_a     6.11565
_cell_length_b     6.11565
_cell_length_c     19.62368
_cell_angle_alpha  90.00000
_cell_angle_beta   90.00000
_cell_angle_gamma  101.02510
_cell_volume       720.40319
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Ho1 Ho 0.36493 0.36493 0.00000 1.00000
  Ho2 Ho 0.33616 0.33616 0.50000 1.00000
  Ho3 Ho 0.66285 0.66285 0.74710 1.00000
  Ho4 Ho 0.66285 0.66285 0.25290 1.00000
  Ho5 Ho 0.19997 0.79819 0.86375 1.00000
  Ho6 Ho 0.19710 0.80342 0.37617 1.00000
  Ho7 Ho 0.19997 0.79819 0.13625 1.00000
  Ho8 Ho 0.19710 0.80342 0.62383 1.00000
  Ho9 Ho 0.79819 0.19997 0.86375 1.00000
  Ho10 Ho 0.80342 0.19710 0.37617 1.00000
  Ho11 Ho 0.80342 0.19710 0.62383 1.00000
  Ho12 Ho 0.79819 0.19997 0.13625 1.00000
  Si1 Si 0.92514 0.48980 0.00000 1.00000
  Si2 Si 0.94942 0.52942 0.50000 1.00000
  Si3 Si 0.47278 0.05483 0.74627 1.00000
  Si4 Si 0.47278 0.05483 0.25373 1.00000
  Si5 Si 0.05483 0.47278 0.74627 1.00000
  Si6 Si 0.05483 0.47278 0.25373 1.00000
  Si7 Si 0.48980 0.92514 0.00000 1.00000
  Si8 Si 0.52942 0.94942 0.50000 1.00000
  Si9 Si 0.96287 0.96287 0.50000 1.00000
  Si10 Si 0.03720 0.03720 0.74570 1.00000
  Si11 Si 0.03720 0.03720 0.25430 1.00000
  Sn1 Sn 0.68268 0.68268 0.09943 1.00000
  Sn2 Sn 0.67646 0.67646 0.59420 1.00000
  Sn3 Sn 0.32404 0.32404 0.65269 1.00000
  Sn4 Sn 0.32200 0.32200 0.15567 1.00000
  Sn5 Sn 0.68268 0.68268 0.90057 1.00000
  Sn6 Sn 0.67646 0.67646 0.40580 1.00000
  Sn7 Sn 0.32200 0.32200 0.84433 1.00000
  Sn8 Sn 0.32404 0.32404 0.34731 1.00000
  Sn9 Sn 0.97919 0.97919 0.00000 1.00000
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